Authors: Rastegaev, VP Avrov, DD Reshanov, SA Lebedev, AO

Citation: Vp. Rastegaev et al., Features of SiC single-crystals grown in vacuum using the LETI method, MAT SCI E B, 61-2, 1999, pp. 77-81

Authors: Avrov, DD Bakin, AS Dorozhkin, SI Rastegaev, VP Tairov, YM

Citation: Dd. Avrov et al., The analysis of mass transfer in system beta-SiC-alpha-SiC under silicon carbide sublimation growth, J CRYST GR, 199, 1999, pp. 1011-1014