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Results:
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Results: 8
Authors:
Yildirim, M
Tuzemen, S
Gurbulak, B
Ates, A
Ayyildiz, E
Citation: M. Yildirim et al., Persistent galvanomagnetic effects related to photo-quenching phenomena inlightly n-type LEC GaAs, PHYS SCR, 63(2), 2001, pp. 169-172
Authors:
Ayyildiz, E
Temirci, C
Bati, B
Turut, A
Citation: E. Ayyildiz et al., The effect of series resistance on calculation of the interface state density distribution in Schottky diodes, INT J ELECT, 88(6), 2001, pp. 625-633
Authors:
Bati, B
Nuhoglu, C
Saglam, M
Ayyildiz, E
Turut, A
Citation: B. Bati et al., On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact, PHYS SCR, 61(2), 2000, pp. 209-212
Authors:
Ayyildiz, E
Bati, B
Temirci, C
Turut, A
Citation: E. Ayyildiz et al., Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes, APPL SURF S, 152(1-2), 1999, pp. 57-62
Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes
Authors:
Cankaya, G
Ucar, N
Ayyildiz, E
Efeoglu, H
Turut, A
Tuzemen, S
Yogurtcu, YK
Citation: G. Cankaya et al., Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes, PHYS REV B, 60(23), 1999, pp. 15944-15947
Authors:
Ayyildiz, E
Turut, A
Citation: E. Ayyildiz et A. Turut, The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy n-GaAs Schottky diodes, SOL ST ELEC, 43(3), 1999, pp. 521-527
Authors:
Ayyildiz, E
Turut, A
Tuzemen, S
Citation: E. Ayyildiz et al., Thermal stability of NiTi alloy contacts on n-type liquid encapsulated Czochralski GaAs, SOL ST COMM, 110(8), 1999, pp. 419-423
Authors:
Ayyildiz, E
Saglam, M
Nuhoglu, C
Turut, A
Citation: E. Ayyildiz et al., The effect of thermal annealing on the series resistance of nearly ideal and ideal Ti/n-GaAs Schottky diodes, PHYS SCR, 58(6), 1998, pp. 636-639
Risultati:
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