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Results: 1-12 |
Results: 12
The inhibitor of apoptosis protein survivin is associated with high-risk behavior of neuroblastoma
Authors: Azuhata, T Scott, D Takamizawa, S Wen, J Davidoff, A Fukuzawa, M Sandler, A
Citation: T. Azuhata et al., The inhibitor of apoptosis protein survivin is associated with high-risk behavior of neuroblastoma, J PED SURG, 36(12), 2001, pp. 1785-1791
Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes
Authors: Azuhata, T Homma, T Ishikawa, Y Chichibu, SF Sota, T Mukai, T
Citation: T. Azuhata et al., Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes, APPL PHYS L, 79(8), 2001, pp. 1100-1102
Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm
Authors: Chichibu, SF Azuhata, T Sota, T Mukai, T
Citation: Sf. Chichibu et al., Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm, APPL PHYS L, 79(3), 2001, pp. 341-343
An attenuated-total-reflection study on the surface phonon-polariton in GaN
Authors: Torii, K Koga, T Sota, T Azuhata, T Chichibu, SF Nakamura, S
Citation: K. Torii et al., An attenuated-total-reflection study on the surface phonon-polariton in GaN, J PHYS-COND, 12(31), 2000, pp. 7041-7044
Raman scattering from phonon-polaritons GaN
Authors: Torii, K Ono, M Sota, T Azuhata, T Chichibu, SF Nakamura, S
Citation: K. Torii et al., Raman scattering from phonon-polaritons GaN, PHYS REV B, 62(16), 2000, pp. 10861-10866
Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction
Authors: Chichibui, SF Setoguchi, A Azuhata, T Mullhauser, J Sugiyama, M Mizutani, T Deguchi, T Nakanishi, H Sota, T Brandt, O Ploog, KH Mukai, T Nakamura, S
Citation: Sf. Chichibui et al., Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction, PHYS ST S-A, 180(1), 2000, pp. 321-325
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
Authors: Chichibu, SF Azuhata, T Sota, T Mukai, T Nakamura, S
Citation: Sf. Chichibu et al., Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes, J APPL PHYS, 88(9), 2000, pp. 5153-5157
Forward Raman scattering by quasilongitudinal optical phonons in GaN
Authors: Azuhata, T Ono, M Torii, K Sota, T Chichibu, SF Nakamura, S
Citation: T. Azuhata et al., Forward Raman scattering by quasilongitudinal optical phonons in GaN, J APPL PHYS, 88(9), 2000, pp. 5202-5205
Photoreflectance spectra of excitonic polaritons in GaN substrate preparedby lateral epitaxial overgrowth
Authors: Chichibu, SF Torii, K Deguchi, T Sota, T Setoguchi, A Nakanishi, H Azuhata, T Nakamura, S
Citation: Sf. Chichibu et al., Photoreflectance spectra of excitonic polaritons in GaN substrate preparedby lateral epitaxial overgrowth, APPL PHYS L, 76(12), 2000, pp. 1576-1578
Infrared lattice absorption in wurtzite GaN
Authors: Azuhata, T Shimada, K Deguchi, T Sota, T Suzuki, K Chichibu, S Nakamura, S
Citation: T. Azuhata et al., Infrared lattice absorption in wurtzite GaN, JPN J A P 2, 38(2B), 1999, pp. L151-L153
Structural and vibrational properties of GaN
Authors: Deguchi, T Ichiryu, D Toshikawa, K Sekiguchi, K Sota, T Matsuo, R Azuhata, T Yamaguchi, M Yagi, T Chichibu, S Nakamura, S
Citation: T. Deguchi et al., Structural and vibrational properties of GaN, J APPL PHYS, 86(4), 1999, pp. 1860-1866
Two-phonon absorption spectra in wurtzite GaN
Authors: Azuhata, T Shimada, K Deguchi, T Sota, T Suzuki, K Chichibu, S Nakamura, S
Citation: T. Azuhata et al., Two-phonon absorption spectra in wurtzite GaN, APPL PHYS L, 75(14), 1999, pp. 2076-2078
Risultati: 1-12 |