Authors: KALININA EV KUZNETSOV NI BABANIN AI DMITRIEV VA SHCHUKAREV AV

Citation: Ev. Kalinina et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF SCHOTTKY BARRIERS ON N-GAN, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1528-1531

Authors: RASTEGAEVA MG ANDREEV AN PETROV AA BABANIN AI YAGOVKINA MA NIKITINA IP

Citation: Mg. Rastegaeva et al., THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 254-258

Authors: VASSILEVSKI KV RASTEGAEVA MG BABANIN AI NIKITINA IP DMITRIEV VA

Citation: Kv. Vassilevski et al., TI NI OHMIC CONTACTS TO N-TYPE GALLIUM NITRIDE/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 292-295

Authors: ANDREEV AN BABANIN AI KUZNETSOV AN RASTEGAEVA MG TERUKOV EI CHELNOKOV VE SHCHEGLOV MP

Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15