Authors: HEFT A WENDLER E BACHMAN T GLASER E WESCH W

Citation: A. Heft et al., DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 142-146

Authors: DSOUZA RN BACHMAN T BAUMGARDNER KR BUTLER WT LITZ M

Citation: Rn. Dsouza et al., CHARACTERIZATION OF CELLULAR-RESPONSES INVOLVED IN REPARATIVE DENTINOGENESIS IN RAT MOLARS, Journal of dental research, 74(2), 1995, pp. 702-709

Authors: KACZANOWSKI J TUROS A GARTNER K BACHMAN T WESCH W

Citation: J. Kaczanowski et al., EVALUATION OF ATOMIC DISPLACEMENT IN ION-IMPLANTED GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 607-610