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Results:
1-16
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Results: 16
Authors:
BAEK JT
PARK HH
AHN BT
JUN CH
KIM YT
SONG YH
KIM J
Citation: Jt. Baek et al., INTERFACIAL REACTION BETWEEN ALUMINUM METAL AND BORON-DOPED POLYSILICON IN A PLANAR TYPE ANTIFUSE DEVICE, JPN J A P 1, 37(5A), 1998, pp. 2451-2454
Authors:
LEE JH
JANG WI
LEE CS
ILLEE Y
CHOI CA
BAEK JT
YOO HJ
Citation: Jh. Lee et al., CHARACTERIZATION OF ANHYDROUS HF GAS-PHASE ETCHING WITH CH3OH FOR SACRIFICIAL OXIDE REMOVAL, Sensors and actuators. A, Physical, 64(1), 1998, pp. 27-32
Authors:
KIM J
PARK MY
PARK IH
BAEK JT
Citation: J. Kim et al., CHARACTERISTICS OF ANTIFUSES WITH PLANAR DOUBLE DIELECTRICS ON SI1-XGEX PAD FOR FIELD-PROGRAMMABLE GATE ARRAY, International journal of electronics (Print), 85(6), 1998, pp. 713-721
Authors:
LEE CS
KANG SY
WOO SI
BAEK JT
YOO HJ
Citation: Cs. Lee et al., CHARACTERIZATION AND REMOVAL OF TRACE HEAVY-METAL CONTAMINATION ON SI-SURFACE RESULTED FROM CHF3 C2F6 REACTIVE ION ETCHING/, JPN J A P 1, 36(4A), 1997, pp. 2096-2100
Authors:
BAEK JT
CHUNG SH
KANG SW
AHN BT
YOO HJ
Citation: Jt. Baek et al., A NEW LOW-RESISTANCE ANTIFUSE WITH PLANAR METAL DIELECTRIC/POLY-SI/DIELECTRIC/METAL STRUCTURE/, JPN J A P 1, 36(3B), 1997, pp. 1642-1645
Authors:
KIM JS
LEE EJ
BAEK JT
LEE WJ
Citation: Js. Kim et al., EFFECTS OF DEPOSITION PARAMETERS ON COMPOSITION, STRUCTURE, RESISTIVITY AND STEP COVERAGE OF TIN THIN-FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 305(1-2), 1997, pp. 103-109
Authors:
JANG WI
LEE JH
BAEK JT
Citation: Wi. Jang et al., PRESSURE CONTROL IN A HIGH-VACUUM MULTICHAMBER SYSTEM, Solid state technology, 40(1), 1997, pp. 67
Authors:
YU BG
KIM KH
SUH KS
BAEK JT
Citation: Bg. Yu et al., CHARACTERISTICS OF SIOF FILMS FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH SF6 GAS, JPN J A P 2, 35(6B), 1996, pp. 745-747
Authors:
JUN CH
KIM YT
BAEK JT
YOO HJ
KIM DR
Citation: Ch. Jun et al., GROWTH-BEHAVIOR OF COPPER METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING THE (HFAC)CU(VTMOS) PRECURSOR ON TITANIUM NITRIDE SUBSTRATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3214-3219
Authors:
KIM YT
JUN CH
LEE JH
BAEK JT
JOUN H
Citation: Yt. Kim et al., TIN BARRIER LAYER FORMATION BY THE 2-STEP RAPID THERMAL-CONVERSION PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3245-3251
Authors:
BAEK JT
PARK HH
KANG SW
AHN BT
YOO IJ
Citation: Jt. Baek et al., INVESTIGATION OF LINK FORMATION IN A NOVEL PLANAR-TYPE ANTIFUSE STRUCTURE, Thin solid films, 288(1-2), 1996, pp. 41-44
Authors:
KIM J
PARK MY
SONG YH
BAEK JT
Citation: J. Kim et al., HIGH-PERFORMANCE ANTIFUSE WITH PLANAR DOUBLE DIELECTRICS ON SI1-XGEX PAD FOR FIELD-PROGRAMMABLE GATE ARRAY APPLICATIONS, Electronics Letters, 32(24), 1996, pp. 2276-2277
Authors:
LEE CS
BAEK JT
YOO HJ
WOO SI
Citation: Cs. Lee et al., MODELING AND CHARACTERIZATION OF GAS-PHASE ETCHING OF THERMAL OXIDE AND TEOS OXIDE USING ANHYDROUS HF AND CH3OH, Journal of the Electrochemical Society, 143(3), 1996, pp. 1099-1103
Authors:
KIM YT
JUN CH
BAEK JT
YOO HJ
Citation: Yt. Kim et al., SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING, Journal of electronic materials, 24(10), 1995, pp. 1413-1417
Authors:
BAEK JT
PARK HH
CHO KI
YOO HJ
KANG SW
AHN BT
Citation: Jt. Baek et al., INTERFACIAL REACTION IN THE SPUTTER-DEPOSITED SIO2 TI0.1W0.9 ANTIFUSESYSTEM/, Journal of applied physics, 78(12), 1995, pp. 7074-7079
Authors:
NAM KS
SONG YH
BAEK JT
KONG HJ
LEE SS
Citation: Ks. Nam et al., THIN-FILM TRANSISTORS WITH POLYCRYSTALLINE SILICON PREPARED BY A NEW ANNEALING METHOD, JPN J A P 1, 32(5A), 1993, pp. 1908-1912
Risultati:
1-16
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