Authors: BOUHDADA A TOUHAMI A BAKKALI S

Citation: A. Bouhdada et al., NEW MODEL OF GATE-INDUCED DRAIN CURRENT-DENSITY IN AN NMOS TRANSISTOR, Microelectronics, 29(11), 1998, pp. 813-816

Authors: BOUHDADA A BAKKALI S TOUHAMI A

Citation: A. Bouhdada et al., MODELING OF GATE-INDUCED DRAIN LEAKAGE IN RELATION TO TECHNOLOGICAL PARAMETERS AND TEMPERATURE, Microelectronics and reliability, 37(4), 1997, pp. 649-652

Authors: BOUHDADA A BAKKALI S NOUACRY A TOUHAMI A

Citation: A. Bouhdada et al., RELATION BETWEEN THE LEAKAGE CURRENTS AND THE DEFECTS CREATED IN THE OXIDE AND AT THE INTERFACE IN A SHORT-CHANNEL NMOS TRANSISTOR, Microelectronics, 28(1), 1997, pp. 85-91

Authors: BOUHDADA A NOUACRY A BAKKALI S

Citation: A. Bouhdada et al., INFLUENCE OF TECHNOLOGICAL PARAMETERS AND TEMPERATURE ON SUBSTRATE CURRENT MODELING IN SHORT-CHANNEL NMOS DEVICES, Annales de chimie, 19(7-8), 1994, pp. 477-482