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CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES
Authors: AUTRAN JL SEIGNEUR F PLOSSU C BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES, Journal of applied physics, 74(6), 1993, pp. 3932-3935
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