AAAAAA

   
Results: 1-12 |
Results: 12
THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SMALL-GAP MATERIALS
Authors: GHATAK KP BANERJEE JP NAG B
Citation: Kp. Ghatak et al., THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS IN SMALL-GAP MATERIALS, Journal of applied physics, 83(3), 1998, pp. 1420-1425
COMPUTER STUDIES OF QUASI READ GALLIUM-ARSENIDE IMPATT DIODE - INCLUDING THE EFFECT OF SPACE-CHARGE
Authors: BANERJEE JP GHOSH S NAG B GHATAK KP
Citation: Jp. Banerjee et al., COMPUTER STUDIES OF QUASI READ GALLIUM-ARSENIDE IMPATT DIODE - INCLUDING THE EFFECT OF SPACE-CHARGE, International journal of electronics, 82(4), 1997, pp. 335-345
THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF TERNARY AND QUATERNARY ALLOYS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION
Authors: GHATAK KP BANERJEE JP BHATTACHARYYA D NAG B
Citation: Kp. Ghatak et al., THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN ULTRATHIN FILMS OF TERNARY AND QUATERNARY ALLOYS IN THE PRESENCE OF AN ARBITRARILY ORIENTED MAGNETIC-FIELD - THEORY AND SUGGESTION FOR EXPERIMENTAL-DETERMINATION, Nanotechnology, 7(2), 1996, pp. 110-116
STUDIES ON AVALANCHE PHASE DELAY AND THE ADMITTANCE OF AN OPTICALLY ILLUMINATED INDIUM-PHOSPHIDE AVALANCHE TRANSIT-TIME DIODE AT MILLIMETER-WAVE WINDOW FREQUENCIES
Authors: BANERJEE JP MUKHERJEE R MUKHOPADHYAY J MALLIK PN
Citation: Jp. Banerjee et al., STUDIES ON AVALANCHE PHASE DELAY AND THE ADMITTANCE OF AN OPTICALLY ILLUMINATED INDIUM-PHOSPHIDE AVALANCHE TRANSIT-TIME DIODE AT MILLIMETER-WAVE WINDOW FREQUENCIES, Physica status solidi. a, Applied research, 153(2), 1996, pp. 567-579
EFFECT OF ELECTRON-DOMINANT AND HOLE-DOMINANT PHOTOCURRENT ON THE MILLIMETER-WAVE PROPERTIES OF AN INDIUM-PHOSPHIDE IMPATT DIODE AT A 94 GHZ WINDOW UNDER OPTICAL ILLUMINATION
Authors: BANERJEE JP MUKHERJEE R
Citation: Jp. Banerjee et R. Mukherjee, EFFECT OF ELECTRON-DOMINANT AND HOLE-DOMINANT PHOTOCURRENT ON THE MILLIMETER-WAVE PROPERTIES OF AN INDIUM-PHOSPHIDE IMPATT DIODE AT A 94 GHZ WINDOW UNDER OPTICAL ILLUMINATION, Semiconductor science and technology, 9(9), 1994, pp. 1690-1695
SPACE-CHARGE DEPENDENCE OF NEGATIVE-RESISTANCE, AVALANCHE LAYER WIDTH, AND AVALANCHE RESONANCE FREQUENCY OF SDR P+ NN+ SI IMPATT DIODES WITH OPTIMIZED DOPING PROFILE
Authors: GANGULY A BANERJEE JP ROY SK
Citation: A. Ganguly et al., SPACE-CHARGE DEPENDENCE OF NEGATIVE-RESISTANCE, AVALANCHE LAYER WIDTH, AND AVALANCHE RESONANCE FREQUENCY OF SDR P+ NN+ SI IMPATT DIODES WITH OPTIMIZED DOPING PROFILE, Physica status solidi. a, Applied research, 142(2), 1994, pp. 527-532
AVALANCHE AND DRIFT LAYER CONTRIBUTIONS TO THE NEGATIVE-RESISTANCE OFMILLIMETER-WAVE P+NN+ INP IMPATT DIODE FOR DIFFERENT CURRENT DENSITIES
Authors: MUKHERJEE R BANERJEE JP
Citation: R. Mukherjee et Jp. Banerjee, AVALANCHE AND DRIFT LAYER CONTRIBUTIONS TO THE NEGATIVE-RESISTANCE OFMILLIMETER-WAVE P+NN+ INP IMPATT DIODE FOR DIFFERENT CURRENT DENSITIES, International journal of electronics, 76(4), 1994, pp. 589-600
CALCULATION OF SHIFT OF AVALANCHE TRANSIT-TIME PHASE DELAY DUE TO OPTICALLY INJECTED CARRIERS IN INDIUM-PHOSPHIDE AVALANCHE-DIODES
Authors: BANERJEE JP MUKHERJEE R
Citation: Jp. Banerjee et R. Mukherjee, CALCULATION OF SHIFT OF AVALANCHE TRANSIT-TIME PHASE DELAY DUE TO OPTICALLY INJECTED CARRIERS IN INDIUM-PHOSPHIDE AVALANCHE-DIODES, Electronics Letters, 30(20), 1994, pp. 1716-1717
COMPUTER-SIMULATION OF THE SMALL-SIGNAL ADMITTANCE AND NEGATIVE-RESISTANCE OF DOUBLE AVALANCHE REGION IMPATT DIODES
Authors: BANERJEE JP ROY SK
Citation: Jp. Banerjee et Sk. Roy, COMPUTER-SIMULATION OF THE SMALL-SIGNAL ADMITTANCE AND NEGATIVE-RESISTANCE OF DOUBLE AVALANCHE REGION IMPATT DIODES, Applied physics. A, Solids and surfaces, 56(6), 1993, pp. 575-580
STUDIES ON THE HIGH-FREQUENCY PROPERTIES OF (111), (110) AND (100) ORIENTED GAAS IMPATT DIODES
Authors: PATI SP MUKHERJEE R BANERJEE JP ROY SK
Citation: Sp. Pati et al., STUDIES ON THE HIGH-FREQUENCY PROPERTIES OF (111), (110) AND (100) ORIENTED GAAS IMPATT DIODES, Applied physics. A, Solids and surfaces, 56(4), 1993, pp. 375-380
HIGH-FREQUENCY NUMERICAL-ANALYSIS OF DOUBLE AVALANCHE REGION IMPATT DIODE
Authors: PATI SP BANERJEE JP ROY SK
Citation: Sp. Pati et al., HIGH-FREQUENCY NUMERICAL-ANALYSIS OF DOUBLE AVALANCHE REGION IMPATT DIODE, Semiconductor science and technology, 6(8), 1991, pp. 777-783
DESIGN AND OPTIMIZATION OF THE DOPING PROFILE OF DOUBLE DRIFT LOW HIGH-LOW INDIUM-PHOSPHIDE DIODES
Authors: BANERJEE JP ROY SK
Citation: Jp. Banerjee et Sk. Roy, DESIGN AND OPTIMIZATION OF THE DOPING PROFILE OF DOUBLE DRIFT LOW HIGH-LOW INDIUM-PHOSPHIDE DIODES, Semiconductor science and technology, 6(7), 1991, pp. 663-669
Risultati: 1-12 |