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Results: 1-25/55
Authors:
BARIBEAU JM
Citation: Jm. Baribeau, X-RAY-SCATTERING ANALYSIS OF INTERFACE ROUGHNESS AND DIFFUSION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1568-1574
Authors:
LOCKWOOD DJ
BARIBEAU JM
SULLIVAN BT
Citation: Dj. Lockwood et al., VISIBLE-LIGHT FROM SI SIO2 SUPERLATTICES IN PLANAR MICROCAVITIES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1707-1709
Authors:
BARIBEAU JM
Citation: Jm. Baribeau, PROCEEDINGS OF THE 7TH INTERNATIONAL-SYMPOSIUM ON SILICON MOLECULAR-BEAM EPITAXY - BANFF, CANADA, JULY 13-17, 1997 - PREFACE, Thin solid films, 321, 1998, pp. 8-8
Authors:
BARIBEAU JM
LAFONTAINE H
Citation: Jm. Baribeau et H. Lafontaine, X-RAY-SCATTERING INVESTIGATION OF THE INTERFACES IN SI SI1-XGEX SUPERLATTICES ON SI(001) GROWN BY MBE AND UHV-CVD/, Thin solid films, 321, 1998, pp. 141-147
Authors:
BARIBEAU JM
Citation: Jm. Baribeau, EVALUATION AND CONTROL OF INTERFACES IN S ILICON-GERMANIUM HETEROSTRUCTURES, Journal de physique. IV, 7(C6), 1997, pp. 91-100
Authors:
KIM YD
HWANG SH
WHANG KW
YOON E
KLEIN MV
BARIBEAU JM
Citation: Yd. Kim et al., OBSERVATION OF E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICE, Journal of the Korean Physical Society, 30, 1997, pp. 284-287
Authors:
KIM YD
KLEIN MV
BARIBEAU JM
HWANG SH
WHANG KW
YOON E
Citation: Yd. Kim et al., SPECTROSCOPIC ELLIPSOMETRY STUDY ON E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICES, Journal of applied physics, 81(12), 1997, pp. 7952-7955
Authors:
HUANG LJ
RAJESH K
LAU WM
WU XZ
LANDHEER D
BARIBEAU JM
INGREY S
Citation: Lj. Huang et al., SI GE HETEROSTRUCTURE ON SULFUR PASSIVATED GAAS(110)/, Applied physics letters, 71(2), 1997, pp. 237-239
Authors:
LU ZH
BARIBEAU JM
Citation: Zh. Lu et Jm. Baribeau, SILICON QUANTUM-WELL AS PASSIVATION BARRIER ON GAAS SURFACE, Applied physics letters, 70(15), 1997, pp. 1989-1991
Authors:
HUANG LJ
LAU WM
TANG HT
LENNARD WN
MITCHELL IV
LANDHEER D
BARIBEAU JM
INGREY S
Citation: Lj. Huang et al., STRUCTURE OF THE SINX GAAS (110) INTERFACE MODIFIED WITH ULTRATHIN SIAND SULFUR PASSIVATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2895-2900
Authors:
LAFONTAINE H
HOUGHTON DC
ELLIOT D
ROWELL NL
BARIBEAU JM
LAFRAMBOISE S
SPROULE GI
ROLFE SJ
Citation: H. Lafontaine et al., CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN USING A COMMERCIALLY AVAILABLE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1675-1681
Authors:
LU ZH
LOCKWOOD DJ
BARIBEAU JM
Citation: Zh. Lu et al., VISIBLE-LIGHT EMITTING SI SIO2 SUPERLATTICES, Solid-state electronics, 40(1-8), 1996, pp. 197-201
Authors:
LOCKWOOD DJ
LU ZH
BARIBEAU JM
Citation: Dj. Lockwood et al., QUANTUM-CONFINED LUMINESCENCE IN SI SIO2 SUPERLATTICES/, Physical review letters, 76(3), 1996, pp. 539-541
Authors:
XIA H
LENNARD WN
HUANG LJ
LAU WM
BARIBEAU JM
LANDHEER D
Citation: H. Xia et al., SULFUR DIFFUSION AT THE SI GAAS(110) INTERFACE/, Journal of applied physics, 80(8), 1996, pp. 4354-4357
Authors:
BARIBEAU JM
LOCKWOOD DJ
SYME RWG
Citation: Jm. Baribeau et al., INTERFACES IN SI GE ATOMIC LAYER SUPERLATTICES ON (001)SI - EFFECT OFGROWTH TEMPERATURE AND WAFER MISORIENTATION/, Journal of applied physics, 80(3), 1996, pp. 1450-1459
Authors:
HUANG LJ
RAJESH K
LAU WM
LANDHEER D
BARIBEAU JM
WU XZ
INGREY S
Citation: Lj. Huang et al., PASSIVATION OF THE SINX GAAS(110) INTERFACE, Canadian journal of physics, 74, 1996, pp. 100-103
Authors:
MCCAFFREY JP
BARIBEAU JM
Citation: Jp. Mccaffrey et Jm. Baribeau, A TRANSMISSION ELECTRON-MICROSCOPE (TEM) CALIBRATION STANDARD SAMPLE FOR ALL MAGNIFICATION, CAMERA CONSTANT, AND IMAGE DIFFRACTION PATTERN ROTATION CALIBRATIONS/, Microscopy research and technique, 32(5), 1995, pp. 449-454
MISFIT DISLOCATION INJECTION, INTERFACIAL STABILITY AND PHOTONIC PROPERTIES OF SI-GE STRAINED LAYERS
Authors:
HOUGHTON DC
BARIBEAU JM
ROWELL NL
Citation: Dc. Houghton et al., MISFIT DISLOCATION INJECTION, INTERFACIAL STABILITY AND PHOTONIC PROPERTIES OF SI-GE STRAINED LAYERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 280-291
Authors:
HEADRICK RL
BARIBEAU JM
Citation: Rl. Headrick et Jm. Baribeau, ROUGHNESS IN SI1-XGEX SI SUPERLATTICES - GROWTH TEMPERATURE-DEPENDENCE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 782-786
Authors:
BARIBEAU JM
LOCKWOOD DJ
HEADRICK RL
Citation: Jm. Baribeau et al., NATURE AND EVOLUTION OF INTERFACES IN SI SI1-XGEX SUPERLATTICES/, Journal of electronic materials, 24(4), 1995, pp. 341-349
Authors:
ENDISCH D
LOVE D
SIMPSON TW
MITCHELL IV
BARIBEAU JM
Citation: D. Endisch et al., HIGH DEPTH RESOLUTION RUTHERFORD SCATTERING USING FORWARD ANGLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 159-164
Authors:
TISCHLER JZ
BUDAI JD
JESSON DE
ERES G
ZSCHACK P
BARIBEAU JM
HOUGHTON DC
Citation: Jz. Tischler et al., ORDERED STRUCTURES IN SIXGE1-X ALLOY THIN-FILMS, Physical review. B, Condensed matter, 51(16), 1995, pp. 10947-10955
Authors:
JESSON DE
CHISHOLM MF
PENNYCOOK SJ
BARIBEAU JM
Citation: De. Jesson et al., ORDERED STRUCTURES AT SI ON GE(001) INTERFACES, Physical review letters, 75(1), 1995, pp. 184-184
Authors:
LU ZH
LOCKWOOD DJ
BARIBEAU JM
Citation: Zh. Lu et al., QUANTUM CONFINEMENT AND LIGHT-EMISSION IN SIO2 SI SUPERLATTICES/, Nature, 378(6554), 1995, pp. 258-260
Authors:
LAAZIRI K
ROORDA S
BARIBEAU JM
Citation: K. Laaziri et al., DENSITY OF AMORPHOUS SIXGE1-X ALLOYS PREPARED BY HIGH-ENERGY ION-IMPLANTATION, Journal of non-crystalline solids, 191(1-2), 1995, pp. 193-199