Authors: BRIERE O BARLA K HALIMAOUI A GHIBAUDO G

Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997), Solid-state electronics, 42(5), 1998, pp. 881-881

Authors: BRIERE O BARLA K HALIMAOUI A GHIBAUDO G

Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS, Solid-state electronics, 41(7), 1997, pp. 987-990

Authors: JAHAN C BARLA K GHIBAUDO G

Citation: C. Jahan et al., INVESTIGATION OF STRESS-INDUCED LEAKAGE CURRENT IN CMOS STRUCTURES WITH ULTRA-THIN GATE DIELECTRICS, Microelectronics and reliability, 37(10-11), 1997, pp. 1529-1532

Authors: STRABONI A BRIERE O THIRION V BARLA K

Citation: A. Straboni et al., RELIABILITY AND CHARACTERIZATION OF ULTRA-THIN DIELECTRIC FILMS USINGFOWLER-NORDHEIM INJECTION EXPERIMENT, Microelectronic engineering, 28(1-4), 1995, pp. 301-308