OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997)

Citation
O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997), Solid-state electronics, 42(5), 1998, pp. 881-881
Citations number
1
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
42
Issue
5
Year of publication
1998
Pages
881 - 881
Database
ISI
SICI code
0038-1101(1998)42:5<881:OBOTTC>2.0.ZU;2-K