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Results: 1-6 |
Results: 6

Authors: BASA C HU YZ TINANI M IRENE EA
Citation: C. Basa et al., EFFECTS OF ION PRETREATMENTS ON THE NUCLEATION OF SILICON ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3223-3226

Authors: BASA C TINANI M IRENE EA
Citation: C. Basa et al., ATOMIC-FORCE MICROSCOPY AND ELLIPSOMETRY STUDY OF THE NUCLEATION AND GROWTH-MECHANISM OF POLYCRYSTALLINE SILICON FILMS ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2466-2479

Authors: BASA C HU YZ IRENE EA
Citation: C. Basa et al., IN-SITU ELLIPSOMETRY FOR MONITORING NUCLEATION AND GROWTH OF SILICON ON SILICON DIOXIDE, Thin solid films, 313, 1998, pp. 424-429

Authors: HU YZ ZHAO CY BASA C GAO WX IRENE EA
Citation: Yz. Hu et al., EFFECTS OF HYDROGEN SURFACE PRETREATMENT OF SILICON DIOXIDE ON THE NUCLEATION AND SURFACE-ROUGHNESS OF POLYCRYSTALLINE SILICON FILMS PREPARED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(4), 1996, pp. 485-487

Authors: COTE D NGUYEN S DOBUZINSKY D BASA C NEUREITHER B
Citation: D. Cote et al., HIGH SELECTIVITY MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF BORON-NITRIDE FILMS, Journal of the Electrochemical Society, 141(12), 1994, pp. 3456-3462

Authors: NEUREITHER B BASA C SANDWICK T BLUMENSTOCK K
Citation: B. Neureither et al., BORON-NITRIDE AND SILICON BORON-NITRIDE FILM AND POLISH CHARACTERIZATION, Journal of the Electrochemical Society, 140(12), 1993, pp. 3607-3611
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