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Results:
1-7
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Results: 7
Authors:
COHEN R
BASTIDE S
CAHEN D
LIBMAN J
SHANZER A
ROSENWAKS Y
Citation: R. Cohen et al., CONTROLLING SURFACES AND INTERFACES OF SEMICONDUCTORS USING ORGANIC-MOLECULES, Optical materials, 9(1-4), 1998, pp. 394-400
Authors:
MARERI P
BASTIDE S
BINDA N
CRESPY A
Citation: P. Mareri et al., MECHANICAL-BEHAVIOR OF POLYPROPYLENE COMPOSITES CONTAINING FINE MINERAL FILLER - EFFECT OF FILLER SURFACE-TREATMENT, Composites science and technology, 58(5), 1998, pp. 747-752
Authors:
BASTIDE S
BUTRUILLE R
CAHEN D
DUTTA A
LIBMAN J
SHANZER A
SUN LM
VILAN A
Citation: S. Bastide et al., CONTROLLING THE WORK FUNCTION OF GAAS BY CHEMISORPTION OF BENZOIC-ACID DERIVATIVES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(14), 1997, pp. 2678-2684
Authors:
COHEN R
BASTIDE S
CAHEN D
LIBMAN J
SHANZER A
ROSENWAKS Y
Citation: R. Cohen et al., CONTROLLING ELECTRONIC-PROPERTIES OF CDTE BY ADSORPTION OF DICARBOXYLIC-ACID DERIVATIVES - RELATING MOLECULAR-PARAMETERS TO BAND BENDING AND ELECTRON-AFFINITY CHANGES, Advanced materials, 9(9), 1997, pp. 746-749
Authors:
BASTIDE S
VEDEL J
LINCOT D
LE QN
SARTI D
Citation: S. Bastide et al., PHOTOELECTROCHEMICAL DIFFUSION LENGTH MEASUREMENTS ON P-TYPE MULTICRYSTALLINE SILICON FOR PHOTOVOLTAIC APPLICATIONS, Journal of the Electrochemical Society, 142(3), 1995, pp. 1024-1030
Authors:
ALBUYARON A
BASTIDE S
BOUCHET D
BRUN N
COLLIEX C
LEVYCLEMENT C
Citation: A. Albuyaron et al., NANOSTRUCTURAL AND NANOCHEMICAL INVESTIGATION OF LUMINESCENT PHOTOELECTROCHEMICALLY ETCHED POROUS N-TYPE SILICON, Journal de physique. I, 4(8), 1994, pp. 1181-1197
Authors:
ALBUYARON A
BASTIDE S
MAURICE JL
LEVYCLEMENT C
Citation: A. Albuyaron et al., MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .2. STUDY OF THE TANGLED SI WIRES IN THE NANOPOROUS LAYER, Journal of luminescence, 57(1-6), 1993, pp. 67-71
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