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Results: 1-13 |
Results: 13
UNCONDITIONALLY THERMALLY STABLE CASCODE GAAS HBTS FOR MICROWAVE APPLICATIONS
Authors: BAYRAKTAROGLU B SALIB M
Citation: B. Bayraktaroglu et M. Salib, UNCONDITIONALLY THERMALLY STABLE CASCODE GAAS HBTS FOR MICROWAVE APPLICATIONS, IEEE microwave and guided wave letters, 7(7), 1997, pp. 187-189
HBT POWER DEVICES AND CIRCUITS
Authors: BAYRAKTAROGLU B
Citation: B. Bayraktaroglu, HBT POWER DEVICES AND CIRCUITS, Solid-state electronics, 41(10), 1997, pp. 1657-1665
THEORETICAL THERMAL RUNAWAY ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS - JUNCTION TEMPERATURE RISE THRESHOLD
Authors: LIOU LL BAYRAKTAROGLU B HUANG CI
Citation: Ll. Liou et al., THEORETICAL THERMAL RUNAWAY ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS - JUNCTION TEMPERATURE RISE THRESHOLD, Solid-state electronics, 39(1), 1996, pp. 165-172
THE ROLE OF BASEBAND NOISE AND ITS UP-CONVERSION IN HBT OSCILLATOR PHASE NOISE
Authors: TUTT MN PAVLIDIS D KHATIBZADEH A BAYRAKTAROGLU B
Citation: Mn. Tutt et al., THE ROLE OF BASEBAND NOISE AND ITS UP-CONVERSION IN HBT OSCILLATOR PHASE NOISE, IEEE transactions on microwave theory and techniques, 43(7), 1995, pp. 1461-1471
LOW-FREQUENCY NOISE CHARACTERISTICS OF SELF-ALIGNED ALGAAS GAAS POWERHETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: TUTT MN PAVLIDIS D KHATIBZADEH A BAYRAKTAROGLU B
Citation: Mn. Tutt et al., LOW-FREQUENCY NOISE CHARACTERISTICS OF SELF-ALIGNED ALGAAS GAAS POWERHETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 219-230
A 5-10-GHZ, 1-WATT HBT AMPLIFIER WITH 58-PERCENT PEAK POWER-ADDED EFFICIENCY
Authors: SALIB M ALI F GUPTA A BAYRAKTAROGLU B DAWSON D
Citation: M. Salib et al., A 5-10-GHZ, 1-WATT HBT AMPLIFIER WITH 58-PERCENT PEAK POWER-ADDED EFFICIENCY, IEEE microwave and guided wave letters, 4(10), 1994, pp. 320-322
BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: LIOU JJ HUANG CI BAYRAKTAROGLU B WILLIAMSON DC PARAB KB
Citation: Jj. Liou et al., BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(5), 1994, pp. 3187-3193
THERMAL-STABILITY ANALYSIS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH MULTIPLE EMITTER FINGERS/
Authors: LIOU LL BAYRAKTAROGLU B
Citation: Ll. Liou et B. Bayraktaroglu, THERMAL-STABILITY ANALYSIS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH MULTIPLE EMITTER FINGERS/, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 629-636
VERY HIGH-POWER-DENSITY CW OPERATION OF GAAS ALGAAS MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: BAYRAKTAROGLU B BARRETTE J KEHIAS L HUANG CI FITCH R NEIDHARD R SCHERER R
Citation: B. Bayraktaroglu et al., VERY HIGH-POWER-DENSITY CW OPERATION OF GAAS ALGAAS MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 14(10), 1993, pp. 493-495
A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS
Authors: LIOU JJ LIOU LL HUANG CI BAYRAKTAROGLU B
Citation: Jj. Liou et al., A PHYSICS-BASED, ANALYTICAL HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL INCLUDING THERMAL AND HIGH-CURRENT EFFECTS, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1570-1577
IIIA-5 THERMALLY-STABLE ALGAAS GAAS MICROWAVE-POWER HBTS/
Authors: BAYRAKTAROGLU B BARRETTE J FITCH R KEHIAS L HUANG CI NEIDHARD R SCHERER R
Citation: B. Bayraktaroglu et al., IIIA-5 THERMALLY-STABLE ALGAAS GAAS MICROWAVE-POWER HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2112-2113
GAAS HBTS FOR MICROWAVE INTEGRATED-CIRCUITS
Authors: BAYRAKTAROGLU B
Citation: B. Bayraktaroglu, GAAS HBTS FOR MICROWAVE INTEGRATED-CIRCUITS, Proceedings of the IEEE, 81(12), 1993, pp. 1762-1785
MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MACK MP BAYRAKTAROGLU B KEHIAS L BARRETTE J NEIDHARD R FITCH R SCHERER R DAVITO D WEST W
Citation: Mp. Mack et al., MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(12), 1993, pp. 1068-1069
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