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Results: 1-8 |
Results: 8
AUGER RECOMBINATION DYNAMICS IN HIGHLY EXCITED HGCDTE
Authors: CIESLA CM MURDIN BN PHILLIPS TJ WHITE AM BEATTIE AR LANGERAK CJGM ELLIOTT CT PIDGEON CR
Citation: Cm. Ciesla et al., AUGER RECOMBINATION DYNAMICS IN HIGHLY EXCITED HGCDTE, Physica status solidi. b, Basic research, 204(1), 1997, pp. 121-124
AN ANALYTIC APPROXIMATION WITH A WIDE-RANGE OF APPLICABILITY FOR BAND-TO-BAND RADIATIVE TRANSITION RATES IN DIRECT, NARROW-GAP SEMICONDUCTORS
Authors: BEATTIE AR WHITE AM
Citation: Ar. Beattie et Am. White, AN ANALYTIC APPROXIMATION WITH A WIDE-RANGE OF APPLICABILITY FOR BAND-TO-BAND RADIATIVE TRANSITION RATES IN DIRECT, NARROW-GAP SEMICONDUCTORS, Semiconductor science and technology, 12(4), 1997, pp. 359-368
AUGER-RECOMBINATION-DYNAMICS OF HG0.795CD0.205TE IN THE HIGH-EXCITATION REGIME
Authors: CIESLA CM MURDIN BN PHILLIPS TJ WHITE AM BEATTIE AR LANGERAK CJCM ELLIOTT CT PIDGEON CR SIVANANTHAN S
Citation: Cm. Ciesla et al., AUGER-RECOMBINATION-DYNAMICS OF HG0.795CD0.205TE IN THE HIGH-EXCITATION REGIME, Applied physics letters, 71(4), 1997, pp. 491-493
AN ANALYTIC APPROXIMATION WITH A WIDE-RANGE OF APPLICABILITY FOR ELECTRON INITIATED AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS
Authors: BEATTIE AR WHITE AM
Citation: Ar. Beattie et Am. White, AN ANALYTIC APPROXIMATION WITH A WIDE-RANGE OF APPLICABILITY FOR ELECTRON INITIATED AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS, Journal of applied physics, 79(2), 1996, pp. 802-813
THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS AND ANTI-THRESHOLDS IN INDIUM-PHOSPHIDE
Authors: WILSON SP BRAND S BEATTIE AR ABRAM RA
Citation: Sp. Wilson et al., THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS AND ANTI-THRESHOLDS IN INDIUM-PHOSPHIDE, Semiconductor science and technology, 8(8), 1993, pp. 1546-1556
THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS, ANTI-THRESHOLDS AND RATES IN GAAS AND ALGAAS
Authors: WILSON SP BRAND S BEATTIE AR ABRAM RA
Citation: Sp. Wilson et al., THE USE OF REALISTIC BAND-STRUCTURE IN IMPACT IONIZATION CALCULATIONSFOR WIDE BANDGAP SEMICONDUCTORS - THRESHOLDS, ANTI-THRESHOLDS AND RATES IN GAAS AND ALGAAS, Semiconductor science and technology, 8(11), 1993, pp. 1944-1956
HOLE IMPACT IONIZATION RATES IN INP AND IN0.53GA0.47AS
Authors: BEATTIE AR ABRAM RA SCHAROCH P
Citation: Ar. Beattie et al., HOLE IMPACT IONIZATION RATES IN INP AND IN0.53GA0.47AS, Semiconductor science and technology, 7(3B), 1992, pp. 512-516
IMPACT IONIZATION - THRESHOLDS, ANTI-THRESHOLDS AND PROPER COUNTING
Authors: BEATTIE AR
Citation: Ar. Beattie, IMPACT IONIZATION - THRESHOLDS, ANTI-THRESHOLDS AND PROPER COUNTING, Semiconductor science and technology, 7(3), 1992, pp. 401-405
Risultati: 1-8 |