Authors:
HU J
HARRISON DA
KARASYUK VA
WATKINS SP
THEWALT MLW
BASSIGNANA IC
BECKETT DJS
HILLIER GC
SPRINGTHORPE AJ
Citation: J. Hu et al., LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY, Journal of applied physics, 84(11), 1998, pp. 6305-6311
Authors:
HARRISON DA
HU J
WATKINS SP
THEWALT MLW
BECKETT DJS
THORPE AJS
Citation: Da. Harrison et al., HIGH-RESOLUTION SPECTROSCOPY OF FREESTANDING GAAS FILMS PREPARED BY EPITAXIAL LIFTOFF, Journal of applied physics, 84(10), 1998, pp. 5772-5775
Authors:
HARRISON DA
ARES R
WATKINS SP
THEWALT MLW
BOLOGNESI CR
BECKETT DJS
SPRINGTHORPE AJ
Citation: Da. Harrison et al., LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION, Applied physics letters, 70(24), 1997, pp. 3275-3277