Authors: NAIK M GUO T CHEN L MOSELY R BEINGLASS I

Citation: M. Naik et al., TEXTURE AND SURFACE-MORPHOLOGY IMPROVEMENT OF AL BY 2-STAGE CHEMICAL-VAPOR-DEPOSITION AND ITS INTEGRATION IN AN AL PLUG-INTERCONNECT SCHEMEFOR SUB 0.25 MU-M METALLIZATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1233-1238

Authors: BEINGLASS I NAIK M

Citation: I. Beinglass et M. Naik, CVD-AL PVD-AL INTEGRATION FOR ADVANCED VIA AND INTERCONNECT TECHNOLOGY, Thin solid films, 320(1), 1998, pp. 35-44

Authors: BAUD L PASSEMARD G GOBIL Y MSAAD H CORTE A PIRES F FUGIER P NOEL P RABINZOHN P BEINGLASS I

Citation: L. Baud et al., INTEGRATION OF A STACK OF 2 FLUORINE-DOPED SILICON-OXIDE THIN-FILMS WITH INTERCONNECT METALLIZATION FOR A SUB-0.35 MU-M INTER-METAL DIELECTRIC APPLICATION, Microelectronic engineering, 37-8(1-4), 1997, pp. 261-269

Authors: LEVEUGLE C HURLEY PK MATHEWSON A MORAN S SHEEHAN E KALNITSKY A LEPERT A BEINGLASS I VENKATESAN M

Citation: C. Leveugle et al., IMPACT OF THE POLYSILICON DOPING LEVEL ON THE PROPERTIES OF THE SILICON OXIDE INTERFACE IN POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/, Microelectronic engineering, 36(1-4), 1997, pp. 215-218

Authors: BEINGLASS I SINHA AK

Citation: I. Beinglass et Ak. Sinha, INTEGRATED SYSTEM FOR DEPOSITION OF POLYSILICON AND WSI(X) FILMS, Microelectronic engineering, 25(2-4), 1994, pp. 201-208