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Results:
1-8
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Results: 8
Authors:
OSBURN CM
BELLUR KR
Citation: Cm. Osburn et Kr. Bellur, LOW PARASITIC RESISTANCE CONTACTS FOR SCALED ULSI DEVICES, Thin solid films, 332(1-2), 1998, pp. 428-436
Authors:
ALSHAREEF HN
BELLUR KR
AUCIELLO O
KINGON AI
Citation: Hn. Alshareef et al., ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS WITH MODIFIED RUO2 BOTTOM ELECTRODES, Integrated ferroelectrics, 8(1-2), 1995, pp. 151-163
Authors:
CHEN X
KINGON AI
ALSHAREEF HN
BELLUR KR
GIFFORD K
AUCIELLO O
Citation: X. Chen et al., LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS, Integrated ferroelectrics, 7(1-4), 1995, pp. 291-306
Authors:
AUCIELLO O
GIFFORD KD
LICHTENWALNER DJ
DAT R
ALSHAREEF HN
BELLUR KR
KINGON AI
Citation: O. Auciello et al., A REVIEW OF COMPOSITION-STRUCTURE-PROPERTY RELATIONSHIPS FOR PZT-BASED HETEROSTRUCTURE CAPACITORS, Integrated ferroelectrics, 6(1-4), 1995, pp. 173-187
Authors:
ALSHAREEF HN
BELLUR KR
AUCIELLO O
KINGON AI
Citation: Hn. Alshareef et al., PHASE EVOLUTION AND ANNEALING EFFECTS ON THE ELECTRICAL-PROPERTIES OFPB(ZR0.53TI0.47)O-3 THIN-FILMS WITH RUO2 ELECTRODES, Thin solid films, 256(1-2), 1995, pp. 73-79
Authors:
ALSHAREEF HN
BELLUR KR
KINGON AI
AUCIELLO O
Citation: Hn. Alshareef et al., INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2 PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES/, Applied physics letters, 66(2), 1995, pp. 239-241
Authors:
ALSHAREEF HN
KINGON AI
CHEN X
BELLUR KR
AUCIELLO O
Citation: Hn. Alshareef et al., CONTRIBUTION OF ELECTRODES AND MICROSTRUCTURES TO THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS, Journal of materials research, 9(11), 1994, pp. 2968-2975
Authors:
ALSHAREEF HN
BELLUR KR
AUCIELLO O
CHEN X
KINGON AI
Citation: Hn. Alshareef et al., EFFECT OF COMPOSITION AND ANNEALING CONDITIONS ON THE ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 THIN-FILMS DEPOSITED BY THE SOL-GEL PROCESS, Thin solid films, 252(1), 1994, pp. 38-43
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