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Results: 1-15 |
Results: 15
EVIDENCE OF DEPTH AND LATERAL DIFFUSION OF DEFECTS DURING FOCUSED ION-BEAM IMPLANTATION
Authors: VIEU C GIERAK J SCHNEIDER M BENASSAYAG G MARZIN JY
Citation: C. Vieu et al., EVIDENCE OF DEPTH AND LATERAL DIFFUSION OF DEFECTS DURING FOCUSED ION-BEAM IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1919-1927
OPTIMIZATION OF EXPERIMENTAL OPERATING PARAMETERS FOR VERY HIGH-RESOLUTION FOCUSED ION-BEAM APPLICATIONS
Authors: GIERAK J VIEU C SCHNEIDER M LAUNOIS H BENASSAYAG G SEPTIER A
Citation: J. Gierak et al., OPTIMIZATION OF EXPERIMENTAL OPERATING PARAMETERS FOR VERY HIGH-RESOLUTION FOCUSED ION-BEAM APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2373-2378
BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS
Authors: ASPAR B BRUEL M MORICEAU H MALEVILLE C POUMEYROL T PAPON AM CLAVERIE A BENASSAYAG G AUBERTONHERVE AJ BARGE T
Citation: B. Aspar et al., BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS, Microelectronic engineering, 36(1-4), 1997, pp. 233-240
TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS
Authors: BONAFOS C OMRI M DEMAUDUIT B BENASSAYAG G CLAVERIE A ALQUIER D MARTINEZ A MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
FOCUSED ION-BEAM NANOLITHOGRAPHY ON ALF3 AT A 10 NM SCALE
Authors: GIERAK J VIEU C LAUNOIS H BENASSAYAG G SEPTIER A
Citation: J. Gierak et al., FOCUSED ION-BEAM NANOLITHOGRAPHY ON ALF3 AT A 10 NM SCALE, Applied physics letters, 70(15), 1997, pp. 2049-2051
3D DEFECT DISTRIBUTION INDUCED BY FOCUSED ION-BEAM IRRADIATION AT VARIABLE TEMPERATURES IN A GAAS GAALAS MULTI-QUANTUM-WELL STRUCTURE/
Authors: GIERAK J BENASSAYAG G SCHNEIDER M VIEU C MARZIN JY
Citation: J. Gierak et al., 3D DEFECT DISTRIBUTION INDUCED BY FOCUSED ION-BEAM IRRADIATION AT VARIABLE TEMPERATURES IN A GAAS GAALAS MULTI-QUANTUM-WELL STRUCTURE/, Microelectronic engineering, 30(1-4), 1996, pp. 253-256
NEW GRAPHITE LIQUID-METAL ION-SOURCE GEOMETRY DEVELOPED FOR CORROSIVEMETAL - APPLICATION TO AN ALUMINUM ION-SOURCE
Authors: GIERAK J BENASSAYAG G
Citation: J. Gierak et G. Benassayag, NEW GRAPHITE LIQUID-METAL ION-SOURCE GEOMETRY DEVELOPED FOR CORROSIVEMETAL - APPLICATION TO AN ALUMINUM ION-SOURCE, Microelectronic engineering, 30(1-4), 1996, pp. 261-264
A LOW-TEMPERATURE FOCUSED ION-BEAM SYSTEM - APPLICATION TO IN-SITU PROCESSING OF HIGH T-C SUPERCONDUCTING DEVICES
Authors: BENASSAYAG G GIERACK J FLAMENT S DOLABDJIAN C GIRE F LESQUEY E GUNTHER C HAMET JF PROUTEAU C ROBBES D
Citation: G. Benassayag et al., A LOW-TEMPERATURE FOCUSED ION-BEAM SYSTEM - APPLICATION TO IN-SITU PROCESSING OF HIGH T-C SUPERCONDUCTING DEVICES, Review of scientific instruments, 67(2), 1996, pp. 446-450
LATERAL DAMAGE EXTENSION DURING MASKED ION-IMPLANTATION INTO GAAS
Authors: FAYE MM VIEU C BENASSAYAG G SALLES P CLAVERIE A
Citation: Mm. Faye et al., LATERAL DAMAGE EXTENSION DURING MASKED ION-IMPLANTATION INTO GAAS, Journal of applied physics, 80(8), 1996, pp. 4303-4307
GAAS ALGAAS QUANTUM WIRES FABRICATED BY SIO2 CAPPING-INDUCED INTERMIXING/
Authors: PEPIN A VIEU C SCHNEIDER M PLANEL R BLOCH J BENASSAYAG G LAUNOIS H MARZIN JY NISSIM Y
Citation: A. Pepin et al., GAAS ALGAAS QUANTUM WIRES FABRICATED BY SIO2 CAPPING-INDUCED INTERMIXING/, Applied physics letters, 69(1), 1996, pp. 61-63
IN-SITU PROCESSING OF HIGH-T-C YBACUO SUPERCONDUCTING DEVICES BY FOCUSED ION-BEAM MICROMACHINING AT LOW-TEMPERATURE
Authors: BENASSAYAG G GIERAK J HAMET JF PROUTEAU C FLAMENT S DOLABDJIAN C GIRE F LESQUEY E GUNTHER G DUBUC C BLOYET D ROBBES D
Citation: G. Benassayag et al., IN-SITU PROCESSING OF HIGH-T-C YBACUO SUPERCONDUCTING DEVICES BY FOCUSED ION-BEAM MICROMACHINING AT LOW-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2772-2776
FABRICATION OF QUANTUM WIRES BY SELECTIVE INTERMIXING INDUCED IN GAASALGAAS QUANTUM-WELL HETEROSTRUCTURES BY SIO2 CAPPING AND SUBSEQUENT ANNEALING/
Authors: PEPIN A VIEU C SCHNEIDER M BENASSAYAG G PLANEL R BLOCH J LAUNOIS H MARZIN JY NISSIM Y
Citation: A. Pepin et al., FABRICATION OF QUANTUM WIRES BY SELECTIVE INTERMIXING INDUCED IN GAASALGAAS QUANTUM-WELL HETEROSTRUCTURES BY SIO2 CAPPING AND SUBSEQUENT ANNEALING/, Superlattices and microstructures, 18(3), 1995, pp. 229-237
OBSERVATION AND SIMULATION OF FOCUSED ION-BEAM-INDUCED DAMAGE
Authors: VIEU C BENASSAYAG G GIERAK J
Citation: C. Vieu et al., OBSERVATION AND SIMULATION OF FOCUSED ION-BEAM-INDUCED DAMAGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 93(4), 1994, pp. 439-446
NEW CHARACTERIZATION METHOD OF ION CURRENT-DENSITY PROFILE BASED ON DAMAGE DISTRIBUTION OF GA-ION BEAM IMPLANTATION IN GAAS( FOCUSED)
Authors: BENASSAYAG G VIEU C GIERAK J SUDRAUD P CORBIN A
Citation: G. Benassayag et al., NEW CHARACTERIZATION METHOD OF ION CURRENT-DENSITY PROFILE BASED ON DAMAGE DISTRIBUTION OF GA-ION BEAM IMPLANTATION IN GAAS( FOCUSED), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2420-2426
DIRECT WRITING OF GOLD NANOSTRUCTURES USING A GOLD-CLUSTER COMPOUND AND A FOCUSED-ION BEAM
Authors: HOFFMANN P BENASSAYAG G GIERAK J FLICSTEIN J MAARSTUMM M VANDENBERGH H
Citation: P. Hoffmann et al., DIRECT WRITING OF GOLD NANOSTRUCTURES USING A GOLD-CLUSTER COMPOUND AND A FOCUSED-ION BEAM, Journal of applied physics, 74(12), 1993, pp. 7588-7591
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