BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS

Authors
ASPAR B BRUEL M MORICEAU H MALEVILLE C POUMEYROL T PAPON AM CLAVERIE A BENASSAYAG G AUBERTONHERVE AJ BARGE T
Citation
B. Aspar et al., BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS, Microelectronic engineering, 36(1-4), 1997, pp. 233-240
Citations number
21
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
233 - 240
Database
ISI
SICI code
0167-9317(1997)36:1-4<233:BMIITS>2.0.ZU;2-E
Abstract
The Smart-Cut process used to produce SOI wafers is based on proton im plantation and wafer bonding. In this paper, the behavior of the cavit ies induced by hydrogen implantation in silicon is studied. The effect of a bonded stiffener on the splitting mechanism is shown. The qualit y of bonding depends greatly on the cleaning process which enables a h igh bonding energy and a high quality material to be achieved.