Authors:
KAABI L
BENBRAHIM J
REMAKI B
GONTRAND C
ELOMARI H
BUREAU JC
SASSI Z
BALLAND B
Citation: L. Kaabi et al., THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 49-52
Authors:
KAABI L
GONTRAND C
BUREAU JC
SASSI Z
BENBRAHIM J
BALLAND B
Citation: L. Kaabi et al., RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS, Annales de chimie, 23(1-2), 1998, pp. 359-364
Authors:
AMARA ABH
BENBRAHIM J
PLANCON A
BENRHAIEM H
Citation: Abh. Amara et al., X-RAY-DIFFRACTION OF HYDRATED AND DEHYDRATED NACRITE STACKING MODES, Journal of applied crystallography, 31, 1998, pp. 654-662