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ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY()N-C-SI OBTAINED BY LPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS/
Authors: AKANI M BENOUIS CE BENZOHRA M
Citation: M. Akani et al., ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY()N-C-SI OBTAINED BY LPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS/, Journal de physique. III, 3(8), 1993, pp. 1675-1687
ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY N-C-SI OBTAINED BYLPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS (VOL 3, PG 1675, 1993)()
Authors: AKANI M BENOUIS CE BENZOHRA M
Citation: M. Akani et al., ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY N-C-SI OBTAINED BYLPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS (VOL 3, PG 1675, 1993)(), Journal de physique. III, 3(11), 1993, pp. 2163-2163
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