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Results: 1-7 |
Results: 7
1.55-MU-M INGAASP-INP SPOT-SIZE-CONVERTED (SSC) LASER WITH SIMPLE TECHNOLOGICAL PROCESS
Authors: FANG RY BERTONE D MELIGA M MAGNETTI G MORELLO G MURGIA S OLIVETI G PAOLETTI R ROSSI G
Citation: Ry. Fang et al., 1.55-MU-M INGAASP-INP SPOT-SIZE-CONVERTED (SSC) LASER WITH SIMPLE TECHNOLOGICAL PROCESS, IEEE photonics technology letters, 10(6), 1998, pp. 775-777
LOW-COST 1.55-MU-M INGAASP-INP SPOT SIZE CONVERTED (SSC) LASER WITH CONVENTIONAL ACTIVE LAYERS
Authors: FANG RY BERTONE D MELIGA M MONTROSSET I OLIVETI G PAOLETTI R
Citation: Ry. Fang et al., LOW-COST 1.55-MU-M INGAASP-INP SPOT SIZE CONVERTED (SSC) LASER WITH CONVENTIONAL ACTIVE LAYERS, IEEE photonics technology letters, 9(8), 1997, pp. 1084-1086
MOCVD REGROWTH OF SEMIINSULATING INP AND P-N-JUNCTION BLOCKING LAYERSAROUND LASER ACTIVE STRIPES
Authors: BERTONE D BRICCONI A FANG RY GREBORIO L MAGNETTI G MELIGA M PAOLETTI R
Citation: D. Bertone et al., MOCVD REGROWTH OF SEMIINSULATING INP AND P-N-JUNCTION BLOCKING LAYERSAROUND LASER ACTIVE STRIPES, Journal of crystal growth, 170(1-4), 1997, pp. 715-718
EAVES STRUCTURES ON (100)INP AND INP INGAASP/INP HETEROSTRUCTURES/
Authors: FANG RY BERTONE D MORELLO G MELIGA M
Citation: Ry. Fang et al., EAVES STRUCTURES ON (100)INP AND INP INGAASP/INP HETEROSTRUCTURES/, Journal of the Electrochemical Society, 144(11), 1997, pp. 3940-3945
TRANSITION FROM ISLAND TO CONTINUOUS INP LAYER GROWTH ON (001)GAAS BYMOCVD
Authors: BERTI M DRIGO AV MAZZER M ROMANATO F LAZZARINI L FRANZOSI P SALVIATI G BERTONE D
Citation: M. Berti et al., TRANSITION FROM ISLAND TO CONTINUOUS INP LAYER GROWTH ON (001)GAAS BYMOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 214-218
STRUCTURAL CHARACTERIZATION TECHNIQUES FOR THE ANALYSIS OF SEMICONDUCTOR STRAINED HETEROSTRUCTURES
Authors: ROMANATO F BERTI M MAZZER M DRIGO AV LAZZARINI L FRANZOSI P SALVIATI G BERTONE D
Citation: F. Romanato et al., STRUCTURAL CHARACTERIZATION TECHNIQUES FOR THE ANALYSIS OF SEMICONDUCTOR STRAINED HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 431-440
ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION CHARACTERIZATION OF INP GAAS GROWN BY ATOMIC LAYER EPITAXY
Authors: LAZZARINI L FRANZOSI P NORMAN CE SALVIATI G BERTONE D
Citation: L. Lazzarini et al., ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION CHARACTERIZATION OF INP GAAS GROWN BY ATOMIC LAYER EPITAXY, Journal of the Electrochemical Society, 140(6), 1993, pp. 1776-1779
Risultati: 1-7 |