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Results: 1-3 |
Results: 3
THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES
Authors: RUBINGER RM BEZERRA JC CHAGAS EF GONZALEZ JC RODRIGUES WN RIBEIRO GM MOREIRA MVB DEOLIVEIRA AG
Citation: Rm. Rubinger et al., THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES, Journal of applied physics, 84(7), 1998, pp. 3764-3769
USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS
Authors: BEZERRA JC DEOLIVEIRA AG MAZZONI MSC CHACHAM H
Citation: Jc. Bezerra et al., USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS, Journal of applied physics, 77(7), 1995, pp. 3283-3287
OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS
Authors: DASILVA MIN CORREA JA BEZERRA JC DEOLIVEIRA AG
Citation: Min. Dasilva et al., OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS, Solid state communications, 92(9), 1994, pp. 745-749
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