Authors: SATHYAVATHI P BHAVE PS BHORASKAR VN

Citation: P. Sathyavathi et al., IRRADIATION EFFECTS OF 35 MEV LITHIUM AND 70 MEV OXYGEN IONS ON THE HOLE LIFETIME AND THE FORWARD CURRENT OF SILICON DIODES, Solid state communications, 106(11), 1998, pp. 755-758

Authors: BHAVE PS BHORASKAR VN

Citation: Ps. Bhave et Vn. Bhoraskar, IRRADIATION EFFECTS OF HIGH-ENERGY HEAVY-IONS ON THE SWITCHING CHARACTERISTICS OF P-N-JUNCTION DIODES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 383-387

Authors: BHAVE PS CHAVAN ST BHORASKAR VN

Citation: Ps. Bhave et al., IMPROVEMENT IN SWITCHING CHARACTERISTICS OF SILICON DIODES THROUGH A SELECTIVE ZONE OF DEFECTS PRODUCED BY 6 MEV ELECTRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(3), 1995, pp. 334-338

Authors: BHAVE PS BHORASKAR VN

Citation: Ps. Bhave et Vn. Bhoraskar, THE RESPONSE OF N-CHANNEL EPROMS TO RADIATION AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(2), 1995, pp. 223-228

Authors: CHAVAN ST BHAVE PS BHORASKAR VN KANJILAL D

Citation: St. Chavan et al., DAMAGE-INDUCED BY 90 MEV SILICON IONS IN CRYSTALLINE SILICON, Journal of applied physics, 78(4), 1995, pp. 2328-2332