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Results: 1-9 |
Results: 9
PROCESSING AND INTEGRATION OF COPPER INTERCONNECTS
Authors: JACKSON RL BROADBENT E CACOURIS T HARRUS A BIBERGER M PATTON E WALSH T
Citation: Rl. Jackson et al., PROCESSING AND INTEGRATION OF COPPER INTERCONNECTS, Solid state technology, 41(3), 1998, pp. 49
THE DETERMINATION OF PHASES FORMED IN ALSICU TIN/TI CONTACT METALLIZATION STRUCTURE OF INTEGRATED-CIRCUITS BY X-RAY-DIFFRACTION/
Authors: FORTIN V GAGNON G CARON M GUJRATHI SC CURRIE JF OUELLET L TREMBLAY Y BIBERGER M
Citation: V. Fortin et al., THE DETERMINATION OF PHASES FORMED IN ALSICU TIN/TI CONTACT METALLIZATION STRUCTURE OF INTEGRATED-CIRCUITS BY X-RAY-DIFFRACTION/, Journal of applied physics, 83(1), 1998, pp. 132-138
EFFECT OF THE TI TIN BILAYER BARRIER AND ITS SURFACE-TREATMENT ON THERELIABILITY OF A TI/TIN/ALSICU/TIN CONTACT METALLIZATION/
Authors: OUELLET L TREMBLAY Y GAGNON G CARON M CURRIE JF GUJRATHI SC BIBERGER M
Citation: L. Ouellet et al., EFFECT OF THE TI TIN BILAYER BARRIER AND ITS SURFACE-TREATMENT ON THERELIABILITY OF A TI/TIN/ALSICU/TIN CONTACT METALLIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3502-3508
THE EFFECT OF THE TI GLUE LAYER IN AN INTEGRATED TI TIN/TI/ALSICU/TINCONTACT METALLIZATION PROCESS/
Authors: OUELLET L TREMBLAY Y GAGNON G CARON M CURRIE JF GUJRATHI SC BIBERGER M
Citation: L. Ouellet et al., THE EFFECT OF THE TI GLUE LAYER IN AN INTEGRATED TI TIN/TI/ALSICU/TINCONTACT METALLIZATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2627-2635
EFFECT OF THE OXIDATION OF TIN ON THE STABILITY OF THE AL TIN INTERFACE/
Authors: GAGNON G GUJRATHI SC CARON M CURRIE JF TREMBLAY Y OUELLET L BIBERGER M REYNOLDS R
Citation: G. Gagnon et al., EFFECT OF THE OXIDATION OF TIN ON THE STABILITY OF THE AL TIN INTERFACE/, Journal of applied physics, 80(1), 1996, pp. 188-195
THE EFFECT OF AN OXYGEN PLASMA EXPOSURE ON THE RELIABILITY OF A TI TIN CONTACT METALLIZATION/
Authors: OUELLET L TREMBLAY Y GAGNON G CARON M CURRIE JF GUJRATHI SC BIBERGER M REYNOLDS R
Citation: L. Ouellet et al., THE EFFECT OF AN OXYGEN PLASMA EXPOSURE ON THE RELIABILITY OF A TI TIN CONTACT METALLIZATION/, Journal of applied physics, 79(8), 1996, pp. 4438-4443
CALCULATION OF A AL-TI-O-N QUATERNARY ISOTHERM DIAGRAM FOR THE PREDICTION OF STABLE PHASES IN TIN AL ALLOY CONTACT METALLIZATION/
Authors: CARON M GAGNON G FORTIN V CURRIE JF OUELLET L TREMBLAY Y BIBERGER M REYNOLDS R
Citation: M. Caron et al., CALCULATION OF A AL-TI-O-N QUATERNARY ISOTHERM DIAGRAM FOR THE PREDICTION OF STABLE PHASES IN TIN AL ALLOY CONTACT METALLIZATION/, Journal of applied physics, 79(8), 1996, pp. 4468-4470
ANALYSIS OF CREEP TRANSIENTS IN PURE METALS FOLLOWING STRESS CHANGES
Authors: BIBERGER M GIBELING JC
Citation: M. Biberger et Jc. Gibeling, ANALYSIS OF CREEP TRANSIENTS IN PURE METALS FOLLOWING STRESS CHANGES, Acta metallurgica et materialia, 43(9), 1995, pp. 3247-3260
COLLIMATED TI TIN CONTACT AND BARRIER LAYERS FOR SUB 0.5 MU-M CVD W-FILLED CONTACT HOLES/
Authors: BIBERGER M JACKSON S TKACH G SCHLUETER J JONES B HUANG CK OUELLET L
Citation: M. Biberger et al., COLLIMATED TI TIN CONTACT AND BARRIER LAYERS FOR SUB 0.5 MU-M CVD W-FILLED CONTACT HOLES/, Thin solid films, 270(1-2), 1995, pp. 522-525
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