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Results:
1-3
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Results: 3
UNIFORM INALAS INP HFET FABRICATED USING SELECTIVE DRY RECESS ETCHING/
Authors:
ACHOUCHE M NAITZERRAD K BIBLEMONT S POST G CLEI A
Citation:
M. Achouche et al., UNIFORM INALAS INP HFET FABRICATED USING SELECTIVE DRY RECESS ETCHING/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 320-324
LOW EXCESS NOISE OF INALAS INP HFETS FABRICATED USING SELECTIVE DRY RECESS ETCHING/
Authors:
ACHOUCHE M BIBLEMONT S COURBET C POST G CLEI A
Citation:
M. Achouche et al., LOW EXCESS NOISE OF INALAS INP HFETS FABRICATED USING SELECTIVE DRY RECESS ETCHING/, Electronics Letters, 32(14), 1996, pp. 1326-1327
8-GBIT S GAAS-ON-INP 1.3-MU-M WAVELENGTH OEIC TRANSMITTER/
Authors:
CALLIGER O CLEI A ROBEIN D AZOULAY R PIERRE B BIBLEMONT S KAZMIERSKI C
Citation:
O. Calliger et al., 8-GBIT S GAAS-ON-INP 1.3-MU-M WAVELENGTH OEIC TRANSMITTER/, IEE proceedings. Optoelectronics, 142(1), 1995, pp. 13-16
Risultati:
1-3
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