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Results: 1-11 |
Results: 11
TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED P-TYPE SILICON
Authors: KESKITALO N JONSSON P NORDGREN K BLEICHNER H NORDLANDER E
Citation: N. Keskitalo et al., TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED P-TYPE SILICON, Journal of applied physics, 83(8), 1998, pp. 4206-4212
OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC
Authors: DOYLE JP SCHONER A NORDELL N GALECKAS A BLEICHNER H LINNARSSON MK LINNROS J SVENSSON BG
Citation: Jp. Doyle et al., OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC, Journal of applied physics, 83(7), 1998, pp. 3649-3651
FREE-CARRIER ABSORPTION AND LIFETIME MAPPING IN 4H SIC EPILAYERS
Authors: GALECKAS A GRIVICKAS V LINNROS J BLEICHNER H HALLIN C
Citation: A. Galeckas et al., FREE-CARRIER ABSORPTION AND LIFETIME MAPPING IN 4H SIC EPILAYERS, Journal of applied physics, 81(8), 1997, pp. 3522-3525
THE AMBIPOLAR AUGER COEFFICIENT - MEASURED TEMPERATURE-DEPENDENCE IN ELECTRON-IRRADIATED AND HIGHLY INJECTED N-TYPE SILICON
Authors: JONSSON P BLEICHNER H ISBERG M NORDLANDER E
Citation: P. Jonsson et al., THE AMBIPOLAR AUGER COEFFICIENT - MEASURED TEMPERATURE-DEPENDENCE IN ELECTRON-IRRADIATED AND HIGHLY INJECTED N-TYPE SILICON, Journal of applied physics, 81(5), 1997, pp. 2256-2262
BRIGHT-LINE DEFECT FORMATION IN SILICON-CARBIDE INJECTION DIODES
Authors: KONSTANTINOV AO BLEICHNER H
Citation: Ao. Konstantinov et H. Bleichner, BRIGHT-LINE DEFECT FORMATION IN SILICON-CARBIDE INJECTION DIODES, Applied physics letters, 71(25), 1997, pp. 3700-3702
TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED N-TYPE SILICON
Authors: BLEICHNER H JONSSON P KESKITALO N NORDLANDER E
Citation: H. Bleichner et al., TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED N-TYPE SILICON, Journal of applied physics, 79(12), 1996, pp. 9142-9148
THE EFFECT OF EMITTER SHORTINGS ON TURN-OFF LIMITATIONS AND DEVICE FAILURE IN GTO THYRISTORS UNDER SNUBBERLESS OPERATION
Authors: BLEICHNER H NORDGREN K ROSLING M BAKOWSKI M NORDLANDER E
Citation: H. Bleichner et al., THE EFFECT OF EMITTER SHORTINGS ON TURN-OFF LIMITATIONS AND DEVICE FAILURE IN GTO THYRISTORS UNDER SNUBBERLESS OPERATION, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 178-187
2-D CHARACTERIZATION OF DYNAMIC CHARGE-DISTRIBUTION IN MOS CONTROLLEDTHYRISTORS - EXPERIMENT AND SIMULATION
Authors: LENDENMANN H FICHTNER W ROSLING M BLEICHNER H NORDLANDER E
Citation: H. Lendenmann et al., 2-D CHARACTERIZATION OF DYNAMIC CHARGE-DISTRIBUTION IN MOS CONTROLLEDTHYRISTORS - EXPERIMENT AND SIMULATION, IEEE electron device letters, 15(6), 1994, pp. 221-223
THE AMBIPOLAR DIFFUSION-COEFFICIENT IN SILICON - DEPENDENCE ON EXCESS-CARRIER CONCENTRATION AND TEMPERATURE
Authors: ROSLING M BLEICHNER H JONSSON P NORDLANDER E
Citation: M. Rosling et al., THE AMBIPOLAR DIFFUSION-COEFFICIENT IN SILICON - DEPENDENCE ON EXCESS-CARRIER CONCENTRATION AND TEMPERATURE, Journal of applied physics, 76(5), 1994, pp. 2855-2859
MEASUREMENTS OF FAILURE PHENOMENA IN INDUCTIVELY LOADED MULTICATHODE GTO THYRISTORS
Authors: BLEICHNER H ROSLING M BAKOWSKI M VOBECKY J NORDLANDER E
Citation: H. Bleichner et al., MEASUREMENTS OF FAILURE PHENOMENA IN INDUCTIVELY LOADED MULTICATHODE GTO THYRISTORS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 251-257
A TIME-DEPENDENT 2-DIMENSIONAL ANALYSIS OF THE TURN-OFF PROCESS IN A GATE TURN-OFF THYRISTOR (GTO)
Authors: VOBECKY J BLEICHNER H ROSLING M NORDLANDER E
Citation: J. Vobecky et al., A TIME-DEPENDENT 2-DIMENSIONAL ANALYSIS OF THE TURN-OFF PROCESS IN A GATE TURN-OFF THYRISTOR (GTO), I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2352-2358
Risultati: 1-11 |