Authors:
SCHAEPKENS M
OEHRLEIN GS
HEDLUND C
JONSSON LB
BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
Citation: S. Berg et al., COMPUTER MODELING AS A TOOL TO PREDICT DEPOSITION RATE AND FILM COMPOSITION IN THE REACTIVE SPUTTERING PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1277-1285
Authors:
SHAMRAI KP
VIRKO VF
BLOM HO
PAVLENKO VP
TARANOV VB
JONSSON LB
HEDLUND C
BERG S
Citation: Kp. Shamrai et al., DISCHARGE DISRUPTIONS IN A HELICON PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2864-2874
Authors:
HEDLUND C
JONSSON LB
KATARDJIEV IV
BERG S
BLOM HO
Citation: C. Hedlund et al., ANGULAR-DEPENDENCE OF THE POLYSILICON ETCH RATE DURING DRY-ETCHING INSF6 AND CL-2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 686-691
Authors:
HEDLUND C
STRANDMAN C
KATARDJIEV IV
BACKLUND Y
BERG S
BLOM HO
Citation: C. Hedlund et al., METHOD FOR THE DETERMINATION OF THE ANGULAR-DEPENDENCE DURING DRY-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3239-3243
Citation: C. Hedlund et al., MICROLOADING EFFECT IN REACTIVE ION ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1962-1965
Authors:
HEDLUND C
CARLSSON P
BLOM HO
BERG S
KATARDJIEV IV
Citation: C. Hedlund et al., PREFERENTIAL SPUTTERING OF SILICON FROM METAL SILICIDES AT ELEVATED-TEMPERATURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1542-1546
Authors:
KATARDJIEV IV
CARTER G
NOBES MJ
BERG S
BLOM HO
Citation: Iv. Katardjiev et al., 3-DIMENSIONAL SIMULATION OF SURFACE EVOLUTION DURING GROWTH AND EROSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 61-68