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Results: 1-9 |
Results: 9
SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES
Authors: SCHAEPKENS M OEHRLEIN GS HEDLUND C JONSSON LB BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
COMPUTER MODELING AS A TOOL TO PREDICT DEPOSITION RATE AND FILM COMPOSITION IN THE REACTIVE SPUTTERING PROCESS
Authors: BERG S NYBERG T BLOM HO NENDER C
Citation: S. Berg et al., COMPUTER MODELING AS A TOOL TO PREDICT DEPOSITION RATE AND FILM COMPOSITION IN THE REACTIVE SPUTTERING PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1277-1285
DISCHARGE DISRUPTIONS IN A HELICON PLASMA SOURCE
Authors: SHAMRAI KP VIRKO VF BLOM HO PAVLENKO VP TARANOV VB JONSSON LB HEDLUND C BERG S
Citation: Kp. Shamrai et al., DISCHARGE DISRUPTIONS IN A HELICON PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2864-2874
ANGULAR-DEPENDENCE OF THE POLYSILICON ETCH RATE DURING DRY-ETCHING INSF6 AND CL-2
Authors: HEDLUND C JONSSON LB KATARDJIEV IV BERG S BLOM HO
Citation: C. Hedlund et al., ANGULAR-DEPENDENCE OF THE POLYSILICON ETCH RATE DURING DRY-ETCHING INSF6 AND CL-2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 686-691
METHOD FOR THE DETERMINATION OF THE ANGULAR-DEPENDENCE DURING DRY-ETCHING
Authors: HEDLUND C STRANDMAN C KATARDJIEV IV BACKLUND Y BERG S BLOM HO
Citation: C. Hedlund et al., METHOD FOR THE DETERMINATION OF THE ANGULAR-DEPENDENCE DURING DRY-ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3239-3243
CONTROLLED TOPOGRAPHY PRODUCTION - TRUE 3D SIMULATION AND EXPERIMENT
Authors: JONSSON LB HEDLUND C KATARDJIEV IV BARKLUND AM BLOM HO BERG S
Citation: Lb. Jonsson et al., CONTROLLED TOPOGRAPHY PRODUCTION - TRUE 3D SIMULATION AND EXPERIMENT, Vacuum, 46(8-10), 1995, pp. 971-975
MICROLOADING EFFECT IN REACTIVE ION ETCHING
Authors: HEDLUND C BLOM HO BERG S
Citation: C. Hedlund et al., MICROLOADING EFFECT IN REACTIVE ION ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1962-1965
PREFERENTIAL SPUTTERING OF SILICON FROM METAL SILICIDES AT ELEVATED-TEMPERATURES
Authors: HEDLUND C CARLSSON P BLOM HO BERG S KATARDJIEV IV
Citation: C. Hedlund et al., PREFERENTIAL SPUTTERING OF SILICON FROM METAL SILICIDES AT ELEVATED-TEMPERATURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1542-1546
3-DIMENSIONAL SIMULATION OF SURFACE EVOLUTION DURING GROWTH AND EROSION
Authors: KATARDJIEV IV CARTER G NOBES MJ BERG S BLOM HO
Citation: Iv. Katardjiev et al., 3-DIMENSIONAL SIMULATION OF SURFACE EVOLUTION DURING GROWTH AND EROSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 61-68
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