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Results: 1-10 |
Results: 10
DOPING PROPERTIES OF C, SI, AND GE IMPURITIES IN GAN AND ALN
Authors: BOGUSLAWSKI P BERNHOLC J
Citation: P. Boguslawski et J. Bernholc, DOPING PROPERTIES OF C, SI, AND GE IMPURITIES IN GAN AND ALN, Physical review. B, Condensed matter, 56(15), 1997, pp. 9496-9505
DOPING PROPERTIES OF AMPHOTERIC C, SI, AND GE IMPURITIES IN GAN AND ALN
Authors: BOGUSLAWSKI P BERNHOLC J
Citation: P. Boguslawski et J. Bernholc, DOPING PROPERTIES OF AMPHOTERIC C, SI, AND GE IMPURITIES IN GAN AND ALN, Acta Physica Polonica. A, 90(4), 1996, pp. 735-738
AMPHOTERIC PROPERTIES OF SUBSTITUTIONAL CARBON IMPURITY IN GAN AND ALN
Authors: BOGUSLAWSKI P BRIGGS EL BERNHOLC J
Citation: P. Boguslawski et al., AMPHOTERIC PROPERTIES OF SUBSTITUTIONAL CARBON IMPURITY IN GAN AND ALN, Applied physics letters, 69(2), 1996, pp. 233-235
NATIVE DEFECTS IN GALLIUM NITRIDE
Authors: BOGUSLAWSKI P BRIGGS EL BERNHOLC J
Citation: P. Boguslawski et al., NATIVE DEFECTS IN GALLIUM NITRIDE, Physical review. B, Condensed matter, 51(23), 1995, pp. 17255-17258
TOWARDS THE IDENTIFICATION OF THE DOMINANT DONOR IN GAN
Authors: PERLIN P SUSKI T TEISSEYRE H LESZCZYNSKI M GRZEGORY I JUN J POROWSKI S BOGUSLAWSKI P BERNHOLC J CHERVIN JC POLIAN A MOUSTAKAS TD
Citation: P. Perlin et al., TOWARDS THE IDENTIFICATION OF THE DOMINANT DONOR IN GAN, Physical review letters, 75(2), 1995, pp. 296-299
AB-INITIO STUDIES OF THE DIFFUSION-BARRIERS AT SINGLE-HEIGHT SI(100) STEPS
Authors: ZHANG QM ROLAND C BOGUSLAWSKI P BERNHOLC J
Citation: Qm. Zhang et al., AB-INITIO STUDIES OF THE DIFFUSION-BARRIERS AT SINGLE-HEIGHT SI(100) STEPS, Physical review letters, 75(1), 1995, pp. 101-104
ATOMIC-ORBITAL INTERPRETATION OF ELECTRONIC-STRUCTURE OF III-V SEMICONDUCTORS - GAAS VERSUS ALAS
Authors: BOGUSLAWSKI P GORCZYCA I
Citation: P. Boguslawski et I. Gorczyca, ATOMIC-ORBITAL INTERPRETATION OF ELECTRONIC-STRUCTURE OF III-V SEMICONDUCTORS - GAAS VERSUS ALAS, Semiconductor science and technology, 9(12), 1994, pp. 2169-2177
STRUCTURE OF MONATOMIC STEPS ON THE SI(001) SURFACE
Authors: BOGUSLAWSKI P ZHANG QM ZHANG Z BERNHOLC J
Citation: P. Boguslawski et al., STRUCTURE OF MONATOMIC STEPS ON THE SI(001) SURFACE, Physical review letters, 72(23), 1994, pp. 3694-3697
GLOBAL AND LOCAL STABILITY OF LATTICE-MISMATCHED SEMICONDUCTOR INTERFACES
Authors: BOGUSLAWSKI P FURDYNA JK
Citation: P. Boguslawski et Jk. Furdyna, GLOBAL AND LOCAL STABILITY OF LATTICE-MISMATCHED SEMICONDUCTOR INTERFACES, Semiconductor science and technology, 8(8), 1993, pp. 1507-1511
STABILITY OF EPITAXIAL GA0.5IN0.5P ORDERED ALLOYS - EFFECTS OF DIMENSIONALITY
Authors: BOGUSLAWSKI P
Citation: P. Boguslawski, STABILITY OF EPITAXIAL GA0.5IN0.5P ORDERED ALLOYS - EFFECTS OF DIMENSIONALITY, Semiconductor science and technology, 6(10), 1991, pp. 953-962
Risultati: 1-10 |