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Results: 1-22 |
Results: 22
HIGH-TRANSCONDUCTANCE DELTA-DOPED INAS ALSB HFETS WITH ULTRATHIN SILICON-DOPED INAS QUANTUM-WELL DONOR LAYER/
Authors: BOLOGNESI CR DVORAK MW CHOW DH
Citation: Cr. Bolognesi et al., HIGH-TRANSCONDUCTANCE DELTA-DOPED INAS ALSB HFETS WITH ULTRATHIN SILICON-DOPED INAS QUANTUM-WELL DONOR LAYER/, IEEE electron device letters, 19(3), 1998, pp. 83-85
INAS ALSB HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS USING A SI-DOPED INAS/ALSB SHORT-PERIOD SUPERLATTICE MODULATION DOPING BARRIER/
Authors: BOLOGNESI CR DVORAK MW CHOW DH
Citation: Cr. Bolognesi et al., INAS ALSB HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS USING A SI-DOPED INAS/ALSB SHORT-PERIOD SUPERLATTICE MODULATION DOPING BARRIER/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 843-845
GATE METALLURGY EFFECTS IN INAS ALSB HFETS - PRELIMINARY-RESULTS AND DEMONSTRATION OF SURFACE FERMI-LEVEL SHIFTS/
Authors: BOLOGNESI CR DVORAK MW CHOW DH
Citation: Cr. Bolognesi et al., GATE METALLURGY EFFECTS IN INAS ALSB HFETS - PRELIMINARY-RESULTS AND DEMONSTRATION OF SURFACE FERMI-LEVEL SHIFTS/, Journal of electronic materials, 27(8), 1998, pp. 54-57
NEARLY IDEAL INP GAASSB/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORSWITH BALLISTICALLY LAUNCHED COLLECTOR ELECTRONS/
Authors: MATINE N DVORAK MW BOLOGNESI CR XU X HU J WATKINS SP THEWALT MLW
Citation: N. Matine et al., NEARLY IDEAL INP GAASSB/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORSWITH BALLISTICALLY LAUNCHED COLLECTOR ELECTRONS/, Electronics Letters, 34(17), 1998, pp. 1700-1702
TYPE-II PHOTOLUMINESCENCE AND CONDUCTION-BAND OFFSETS OF GAASSB INGAAS AND GAASSB/INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: HU J XU XG STOTZ JAH WATKINS SP CURZON AE THEWALT MLW MATINE N BOLOGNESI CR
Citation: J. Hu et al., TYPE-II PHOTOLUMINESCENCE AND CONDUCTION-BAND OFFSETS OF GAASSB INGAAS AND GAASSB/INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Applied physics letters, 73(19), 1998, pp. 2799-2801
SIDEGATING-INDUCED NEGATIVE DIFFERENTIAL RESISTANCE IN MBE-GROWN INASALSB HFETS/
Authors: BOLOGNESI CR DVORAK MW CHOW DH
Citation: Cr. Bolognesi et al., SIDEGATING-INDUCED NEGATIVE DIFFERENTIAL RESISTANCE IN MBE-GROWN INASALSB HFETS/, JPN J A P 1, 36(3B), 1997, pp. 1789-1794
ATOMIC-FORCE MICROSCOPY STUDY OF MORPHOLOGY AND DISLOCATION-STRUCTUREOF INAS AND GASB GROWN ON HIGHLY MISMATCHED SUBSTRATES
Authors: WATKINS SP ARES R SOERENSEN G ZHONG W TRAN CA BRYCE JE BOLOGNESI CR
Citation: Sp. Watkins et al., ATOMIC-FORCE MICROSCOPY STUDY OF MORPHOLOGY AND DISLOCATION-STRUCTUREOF INAS AND GASB GROWN ON HIGHLY MISMATCHED SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 788-793
IMPROVED BREAKDOWN VOLTAGES IN SUBMICROMETER PLANAR GAAS-MESFETS WITHA THIN (GA,IN)P SURFACE-LAYER
Authors: BOLOGNESI CR DVORAK MW SOERENSEN G WATKINS SP
Citation: Cr. Bolognesi et al., IMPROVED BREAKDOWN VOLTAGES IN SUBMICROMETER PLANAR GAAS-MESFETS WITHA THIN (GA,IN)P SURFACE-LAYER, Electronics Letters, 33(7), 1997, pp. 636-637
LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION
Authors: HARRISON DA ARES R WATKINS SP THEWALT MLW BOLOGNESI CR BECKETT DJS SPRINGTHORPE AJ
Citation: Da. Harrison et al., LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION, Applied physics letters, 70(24), 1997, pp. 3275-3277
INAS ALSB DUAL-GATE HFETS
Authors: BOLOGNESI CR CHOW DH
Citation: Cr. Bolognesi et Dh. Chow, INAS ALSB DUAL-GATE HFETS, IEEE electron device letters, 17(11), 1996, pp. 534-536
LENGTH DEPENDENCE OF QUANTIZED CONDUCTANCE IN BALLISTIC CONSTRICTIONSFABRICATED ON INAS ALSB QUANTUM-WELLS/
Authors: KOESTER SJ BRAR B BOLOGNESI CR CAINE EJ PATLACH A HU EL KROEMER H
Citation: Sj. Koester et al., LENGTH DEPENDENCE OF QUANTIZED CONDUCTANCE IN BALLISTIC CONSTRICTIONSFABRICATED ON INAS ALSB QUANTUM-WELLS/, Physical review. B, Condensed matter, 53(19), 1996, pp. 13063-13073
DEMONSTRATION OF NAND LOGIC SWITCHING IN INAS ALSB DUAL-GATE HFETS/
Authors: DVORAK MW BOLOGNESI CR CHOW DH
Citation: Mw. Dvorak et al., DEMONSTRATION OF NAND LOGIC SWITCHING IN INAS ALSB DUAL-GATE HFETS/, Electronics Letters, 32(24), 1996, pp. 2273-2274
INAS CHANNEL HETEROSTRUCTURE-FIELD EFFECT TRANSISTORS WITH INAS AISB SHORT-PERIOD SUPERLATTICE BARRIERS/
Authors: BOLOGNESI CR BRYCE JE CHOW DH
Citation: Cr. Bolognesi et al., INAS CHANNEL HETEROSTRUCTURE-FIELD EFFECT TRANSISTORS WITH INAS AISB SHORT-PERIOD SUPERLATTICE BARRIERS/, Applied physics letters, 69(23), 1996, pp. 3531-3533
IMPACT OF FLUORINE INCORPORATION IN THE POLYSILICON EMITTER OF NPN BIPOLAR-TRANSISTORS
Authors: BOLOGNESI CR ROWLANDSON MB
Citation: Cr. Bolognesi et Mb. Rowlandson, IMPACT OF FLUORINE INCORPORATION IN THE POLYSILICON EMITTER OF NPN BIPOLAR-TRANSISTORS, IEEE electron device letters, 16(5), 1995, pp. 172-174
IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: BOLOGNESI CR CAINE EJ KROEMER H
Citation: Cr. Bolognesi et al., IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 15(1), 1994, pp. 16-18
ENERGY-DEPENDENT CYCLOTRON MASS IN INAS ALSB QUANTUM-WELLS/
Authors: GAUER C SCRIBA J WIXFORTH A KOTTHAUS JP BOLOGNESI CR NGUYEN C BRAR B KROEMER H
Citation: C. Gauer et al., ENERGY-DEPENDENT CYCLOTRON MASS IN INAS ALSB QUANTUM-WELLS/, Semiconductor science and technology, 9(9), 1994, pp. 1580-1583
DETERMINATION OF ONE-DIMENSIONAL SUBBAND SPACINGS IN INAS ALSB BALLISTIC CONSTRICTIONS USING MAGNETIC-FIELD MEASUREMENTS/
Authors: KOESTER SJ BOLOGNESI CR THOMAS M HU EL KROEMER H ROOKS MJ
Citation: Sj. Koester et al., DETERMINATION OF ONE-DIMENSIONAL SUBBAND SPACINGS IN INAS ALSB BALLISTIC CONSTRICTIONS USING MAGNETIC-FIELD MEASUREMENTS/, Physical review. B, Condensed matter, 50(8), 1994, pp. 5710-5712
QUANTIZED CONDUCTANCE IN AN INAS ALSB SPLIT-GATE BALLISTIC CONSTRICTION WITH 1.0-MU-M CHANNEL-LENGTH/
Authors: KOESTER SJ BOLOGNESI CR HU EL KROEMER H ROOKS MJ
Citation: Sj. Koester et al., QUANTIZED CONDUCTANCE IN AN INAS ALSB SPLIT-GATE BALLISTIC CONSTRICTION WITH 1.0-MU-M CHANNEL-LENGTH/, Physical review. B, Condensed matter, 49(12), 1994, pp. 8514-8517
LATERAL POTENTIAL MODULATION IN INAS ALSB QUANTUM-WELLS BY WET ETCHING/
Authors: UTZMEIER T SCHLOSSER T ENSSLIN K KOTTHAUS JP BOLOGNESI CR NGUYEN C KROEMER H
Citation: T. Utzmeier et al., LATERAL POTENTIAL MODULATION IN INAS ALSB QUANTUM-WELLS BY WET ETCHING/, Solid-state electronics, 37(4-6), 1994, pp. 575-578
DESIGN AND ANALYSIS OF INAS ALSB BALLISTIC CONSTRICTIONS FOR HIGH-TEMPERATURE OPERATION AND LOW GATE LEAKAGE/
Authors: KOESTER SJ BOLOGNESI CR HU EL KROEMER H ROOKS MJ SNIDER GL
Citation: Sj. Koester et al., DESIGN AND ANALYSIS OF INAS ALSB BALLISTIC CONSTRICTIONS FOR HIGH-TEMPERATURE OPERATION AND LOW GATE LEAKAGE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2528-2531
INTERSUBBAND TRANSITIONS IN INAS ALSB QUANTUM-WELLS/
Authors: SIMON A SCRIBA J GAUER C WIXFORTH A KOTTHAUS JP BOLOGNESI CR NGUYEN C TUTTLE G KROEMER H
Citation: A. Simon et al., INTERSUBBAND TRANSITIONS IN INAS ALSB QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 201-204
IIIA-8 IMPROVED CHARGE CONTROL AND THE FREQUENCY PERFORMANCE IN INAS ALSB HFETS/
Authors: BOLOGNESI CR CAINE EJ KROEMER H
Citation: Cr. Bolognesi et al., IIIA-8 IMPROVED CHARGE CONTROL AND THE FREQUENCY PERFORMANCE IN INAS ALSB HFETS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2114-2114
Risultati: 1-22 |