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Results: 1-25 | 26-33 |
Results: 26-33/33
OPTIMUM CHANNEL THICKNESS OF AL0.3GA0.7AS IN0.25GA0.75AS/GAAS HETEROSTRUCTURES FOR ELECTRON-TRANSPORT APPLICATIONS/
Authors: HADDAB Y BONARD JM HAACKE S DEVEAUD B
Citation: Y. Haddab et al., OPTIMUM CHANNEL THICKNESS OF AL0.3GA0.7AS IN0.25GA0.75AS/GAAS HETEROSTRUCTURES FOR ELECTRON-TRANSPORT APPLICATIONS/, Journal of applied physics, 80(11), 1996, pp. 6309-6314
QUANTITATIVE-ANALYSIS OF ELECTRON-BEAM-INDUCED CURRENT PROFILES ACROSS P-N-JUNCTIONS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES/
Authors: BONARD JM GANIERE JD
Citation: Jm. Bonard et Jd. Ganiere, QUANTITATIVE-ANALYSIS OF ELECTRON-BEAM-INDUCED CURRENT PROFILES ACROSS P-N-JUNCTIONS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES/, Journal of applied physics, 79(9), 1996, pp. 6987-6994
CATHODOLUMINESCENCE STUDY OF THE SPATIAL-DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS
Authors: BONARD JM GANIERE JD AKAMATSU B ARAUJO D REINHART FK
Citation: Jm. Bonard et al., CATHODOLUMINESCENCE STUDY OF THE SPATIAL-DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS, Journal of applied physics, 79(11), 1996, pp. 8693-8703
TUNING OF ZNSE-GAAS BAND DISCONTINUITIES IN HETEROJUNCTION DIODES
Authors: PELLEGRINI V BORGER M LAZZERI M BELTRAM F PAGGEL JJ SORBA L RUBINI S LAZZARINO M FRANCIOSI A BONARD JM GANIERE JD
Citation: V. Pellegrini et al., TUNING OF ZNSE-GAAS BAND DISCONTINUITIES IN HETEROJUNCTION DIODES, Applied physics letters, 69(21), 1996, pp. 3233-3235
CAPACITANCE AND DRAIN CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON MOLECULAR-BEAM EPITAXY-GROWN GAAS IN0.25GA0.75AS/AL0.3GA0.7AS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: HADDAB Y PY MA BONARD JM BUHLMANN HJ ILEGEMS M
Citation: Y. Haddab et al., CAPACITANCE AND DRAIN CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON MOLECULAR-BEAM EPITAXY-GROWN GAAS IN0.25GA0.75AS/AL0.3GA0.7AS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Materials science and technology, 11(10), 1995, pp. 1079-1082
CHEMICAL BEAM EPITAXY OF 1.55-MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES
Authors: CARLIN JFR SALLESE JM DEFAYS MP GRUNBERG PJ RUDRA AP BONARD JM ILEGEMS M GANIERE JD
Citation: Jfr. Carlin et al., CHEMICAL BEAM EPITAXY OF 1.55-MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES, Optical engineering, 34(7), 1995, pp. 1993-1999
DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE
Authors: ARAUJO D BONARD JM OELGART G GANIERE JD MORIERGENOUD F REINHART FK
Citation: D. Araujo et al., DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 124-129
ONE-STEP GROWTH OF BURIED HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY OVER PATTERNED INP SUBSTRATES
Authors: RUDRA A SUGIURA H LING J BONARD JM GANIERE JD DEFAYS M ARAUJO D ILEGEMS M
Citation: A. Rudra et al., ONE-STEP GROWTH OF BURIED HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY OVER PATTERNED INP SUBSTRATES, Journal of crystal growth, 136(1-4), 1994, pp. 173-178
Risultati: 1-25 | 26-33 |