Authors: TUTOV EA RYABTSEV SV BORMONTOV EN

Citation: Ea. Tutov et al., FUNCTIONAL-PROPERTIES OF SILICON NON-NATIVE-OXIDE HETEROSTRUCTURES/, Technical physics letters, 23(6), 1997, pp. 456-458

Authors: BORMONTOV EN LUKIN SV

Citation: En. Bormontov et Sv. Lukin, INVESTIGATION OF INTERFACIAL STATES IN MIS STRUCTURES BY A SINGLE-FREQUENCY ADMITTANCE METHOD, Technical physics, 42(10), 1997, pp. 1162-1165

Authors: BORMONTOV EN GOLOVIN SV KOTOV SV LUKIN SV

Citation: En. Bormontov et al., METHOD FOR RAPID-DETERMINATION OF THE INTERFACE PARAMETERS OF PLANAR-NONUNIFORM MIS STRUCTURES, Semiconductors, 30(7), 1996, pp. 635-638

Authors: BORMONTOV EN KOTOV SV LUKIN SV GOLOVIN SV

Citation: En. Bormontov et al., STUDY OF SURFACE-STATES IN MIS STRUCTURES BY A 2-TEMPERATURE ADMITTANCE METHOD, Semiconductors, 29(4), 1995, pp. 336-339

Authors: TUTOV EA KUKUEV VI BAEV AA BORMONTOV EN DOMASHEVSKAYA EP

Citation: Ea. Tutov et al., ELECTRON PROCESSES IN ALPHA-WO3-SI HETERO STRUCTURES UNDER ELECTROCHROMISM AND PHOTOCHROMISM, Zurnal tehniceskoj fiziki, 65(7), 1995, pp. 117-124