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Authors: BORNER F EICHLER S POLITY A KRAUSEREHBERG R HAMMER R JURISCH M

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Citation: S. Eichler et al., DEFECTS IN SILICON AFTER B- A STUDY USING A POSITRON-BEAM TECHNIQUE, RUTHERFORD BACKSCATTERING, SECONDARY NEUTRAL MASS-SPECTROSCOPY, AND INFRARED-ABSORPTION SPECTROSCOPY( IMPLANTATION ), Physical review. B, Condensed matter, 56(3), 1997, pp. 1393-1403