Authors: CHATEI H BOUGDIRA J REMY M ALNOT P

Citation: H. Chatei et al., MECHANISMS OF DIAMOND FILMS DEPOSITION FROM MPACVD IN METHANE-HYDROGEN AND NITROGEN MIXTURES, Surface & coatings technology, 98(1-3), 1998, pp. 1013-1019

Authors: BELMAHI M BENEDIC F BOUGDIRA J CHATEI H REMY M ALNOT P

Citation: M. Belmahi et al., INFLUENCE OF MECHANICAL AND CHEMICAL SILICON SURFACE PREPARATION ON DIAMOND NUCLEATION AND GROWTH IN CH4 H-2 SYSTEM DISCHARGE/, Surface & coatings technology, 106(1), 1998, pp. 53-59

Authors: BOUGDIRA J REMY M ALNOT P BRUCH C KRUGER JK CHATEI H DERKAOUI J

Citation: J. Bougdira et al., COMBINED EFFECT OF NITROGEN AND PULSED MICROWAVE PLASMA ON DIAMOND GROWTH USING CH4-CO2 GAS-MIXTURE, Thin solid films, 325(1-2), 1998, pp. 7-13

Authors: CHATEI H BOUGDIRA J REMY M ALNOT P BRUCH C KRUGER JK

Citation: H. Chatei et al., COMBINED EFFECT OF NITROGEN AND PULSED MICROWAVE PLASMA ON DIAMOND GROWTH, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 505-510

Authors: CHATEI H BOUGDIRA J REMY M ALNOT P BRUCH C KRUGER JK

Citation: H. Chatei et al., EFFECT OF NITROGEN CONCENTRATION ON PLASMA REACTIVITY AND DIAMOND GROWTH IN A H2CH4-N-2 MICROWAVE-DISCHARGE, DIAMOND AND RELATED MATERIALS, 6(1), 1997, pp. 107-119

Authors: BOULKROUN K OUENNOUGHI Z BOUZIANE A BOUGDIRA J ELBOUABDELLATI M LEPLEY B

Citation: K. Boulkroun et al., DETERMINATION OF INTERFACE STATE DENSITY ON AU TA2O5/N-INP STRUCTURESBY DIFFERENT METHODS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 416-420