AAAAAA

   
Results: 1-9 |
Results: 9
INVESTIGATION OF GAN DEPOSITION ON SI, AL2O3, AND GAAS USING IN-SITU MASS-SPECTROSCOPY OF RECOILED IONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
Authors: TAFEMER WT BENSAOULA A KIM E BOUSETTA A
Citation: Wt. Tafemer et al., INVESTIGATION OF GAN DEPOSITION ON SI, AL2O3, AND GAAS USING IN-SITU MASS-SPECTROSCOPY OF RECOILED IONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2357-2361
DYNAMICAL CHARGE AND FORCE-CONSTANT CALCULATIONS IN C-BN UNDER PRESSURE
Authors: BADI N BOUSETTA A BENSAOULA A AOURAG H
Citation: N. Badi et al., DYNAMICAL CHARGE AND FORCE-CONSTANT CALCULATIONS IN C-BN UNDER PRESSURE, Physica status solidi. b, Basic research, 198(2), 1996, pp. 721-728
THE INVESTIGATION OF GAN GROWTH ON SILICON AND SAPPHIRE USING IN-SITUTIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED
Authors: TAFERNER WT BENSAOULA A KIM E BOUSETTA A
Citation: Wt. Taferner et al., THE INVESTIGATION OF GAN GROWTH ON SILICON AND SAPPHIRE USING IN-SITUTIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED, Journal of crystal growth, 164(1-4), 1996, pp. 167-174
THE NITRIDATION OF GAAS AND GAN DEPOSITION ON GAAS EXAMINED BY IN-SITU TIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED
Authors: BENSAOULA A TAFERNER WT KIM E BOUSETTA A
Citation: A. Bensaoula et al., THE NITRIDATION OF GAAS AND GAN DEPOSITION ON GAAS EXAMINED BY IN-SITU TIME-OF-FLIGHT LOW-ENERGY ION-SCATTERING AND RHEED, Journal of crystal growth, 164(1-4), 1996, pp. 185-189
ELECTRICAL-PROPERTIES OF BORON-NITRIDE THIN-FILMS GROWN BY NEUTRALIZED NITROGEN ION-ASSISTED VAPOR-DEPOSITION
Authors: LU M BOUSETTA A BENSAOULA A WATERS K SCHULTZ JA
Citation: M. Lu et al., ELECTRICAL-PROPERTIES OF BORON-NITRIDE THIN-FILMS GROWN BY NEUTRALIZED NITROGEN ION-ASSISTED VAPOR-DEPOSITION, Applied physics letters, 68(5), 1996, pp. 622-624
PHYSICAL-PROPERTIES OF THIN CARBON NITRIDE FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE ASSISTED VAPOR-DEPOSITION
Authors: BOUSETTA A LU M BENSAOULA A
Citation: A. Bousetta et al., PHYSICAL-PROPERTIES OF THIN CARBON NITRIDE FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE ASSISTED VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1639-1643
STRUCTURAL-ANALYSIS OF THE INITIAL INTERACTION BETWEEN OXYGEN AND A CLEAN SI(100) BY TIME-OF-FLIGHT AND RECOILING SPECTROSCOPY
Authors: BOUSETTA A HSU CC WANG Y
Citation: A. Bousetta et al., STRUCTURAL-ANALYSIS OF THE INITIAL INTERACTION BETWEEN OXYGEN AND A CLEAN SI(100) BY TIME-OF-FLIGHT AND RECOILING SPECTROSCOPY, Surface review and letters, 2(2), 1995, pp. 171-176
FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION
Authors: BOUSETTA A LU M BENSAOULA A SCHULTZ A
Citation: A. Bousetta et al., FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION, Applied physics letters, 65(6), 1994, pp. 696-698
GROWTH OF CUBIC BORON-NITRIDE ON SI(100) BY NEUTRALIZED NITROGEN ION-BOMBARDMENT
Authors: LU M BOUSETTA A SUKACH R BENSAOULA A WALTERS K EIPERSSMITH K SCHULTZ A
Citation: M. Lu et al., GROWTH OF CUBIC BORON-NITRIDE ON SI(100) BY NEUTRALIZED NITROGEN ION-BOMBARDMENT, Applied physics letters, 64(12), 1994, pp. 1514-1516
Risultati: 1-9 |