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Results: 1-9 |
Results: 9
EPITAXIAL-GROWTH OF THE GAN FILM BY REMOTE-PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: LAI WC CHANG CY YOKOYAMA M GUO JD TSANG JS CHAN SH BOW JS WEI SC HONG RH SZE SM
Citation: Wc. Lai et al., EPITAXIAL-GROWTH OF THE GAN FILM BY REMOTE-PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(10), 1998, pp. 5465-5469
AL L-CORE EDGE PINE STRUCTURE IN AL, ALN AND ALPHA-AL2O3 - A COMPARISON OF MICROELECTRON ENERGY-LOSS SPECTRA WITH THEORY
Authors: FAN XJ BOW JS CARPENTER RW LIN SH TIAN SF
Citation: Xj. Fan et al., AL L-CORE EDGE PINE STRUCTURE IN AL, ALN AND ALPHA-AL2O3 - A COMPARISON OF MICROELECTRON ENERGY-LOSS SPECTRA WITH THEORY, Acta physica Sinica, 7(3), 1998, pp. 214-226
LOCAL CHEMISTRY AT INTERFACES AND BOUNDARIES - CERAMIC AND ELECTRONICCOMPOSITE-MATERIALS
Authors: CARPENTER RW BOW JS KIM MJ DASCHOWDHURY K BRAUE W
Citation: Rw. Carpenter et al., LOCAL CHEMISTRY AT INTERFACES AND BOUNDARIES - CERAMIC AND ELECTRONICCOMPOSITE-MATERIALS, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 587-599
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF PLATINUM AND ALPHA-(6H) SILICON-CARBIDE(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF PLATINUM AND ALPHA-(6H) SILICON-CARBIDE(0001), Journal of materials research, 10(9), 1995, pp. 2336-2342
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW GLASS RC
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001), Journal of materials research, 10(3), 1995, pp. 668-679
RETENTION OF NANOSTRUCTURE IN ALUMINUM-OXIDE BY VERY RAPID SINTERING AT 1150-DEGREES-C
Authors: RISBUD SH SHAN CH MUKHERJEE AK KIM MJ BOW JS HOLL RA
Citation: Sh. Risbud et al., RETENTION OF NANOSTRUCTURE IN ALUMINUM-OXIDE BY VERY RAPID SINTERING AT 1150-DEGREES-C, Journal of materials research, 10(2), 1995, pp. 237-239
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001), Journal of materials research, 10(1), 1995, pp. 26-33
NANOSTRUCTURE AND CHEMICAL INHOMOGENEITY IN TBFE MAGNETOOPTICAL FILMS
Authors: KIM MJ BOW JS CARPENTER RW LIU J KIM SG LEE SK KIM WM YOON JS
Citation: Mj. Kim et al., NANOSTRUCTURE AND CHEMICAL INHOMOGENEITY IN TBFE MAGNETOOPTICAL FILMS, IEEE transactions on magnetics, 30(6), 1994, pp. 4398-4400
THIN-FILM TI 6H-SIC INTERFACIAL REACTION - HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY/
Authors: BOW JS PORTER LM KIM MJ CARPENTER RW DAVIS RF
Citation: Js. Bow et al., THIN-FILM TI 6H-SIC INTERFACIAL REACTION - HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY/, Ultramicroscopy, 52(3-4), 1993, pp. 289-296
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