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Results: 1-7 |
Results: 7
XS-MET - A REDUCED COMPLEXITY FABRICATION PROCESS USING COMPLEMENTARYHETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FOR ANALOG, LOW-POWER, SPACEAPPLICATIONS
Authors: CERNY CL VIA GD EBEL JL DESALVO GC QUACH TK BOZADA CA DETTMER RW GILLESPIE JK JENKINS TJ PETTIFORD CI SEWELL JS EHRET JE MERKEL K WILSON A LYKE J
Citation: Cl. Cerny et al., XS-MET - A REDUCED COMPLEXITY FABRICATION PROCESS USING COMPLEMENTARYHETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FOR ANALOG, LOW-POWER, SPACEAPPLICATIONS, IEEE aerospace and electronic systems magazine, 13(3), 1998, pp. 7-14
DEPTH MEASUREMENT OF DOPED SEMICONDUCTORS USING THE HALL TECHNIQUE
Authors: DESALVO GC LOOK DC BOZADA CA EBEL JL
Citation: Gc. Desalvo et al., DEPTH MEASUREMENT OF DOPED SEMICONDUCTORS USING THE HALL TECHNIQUE, Journal of applied physics, 81(1), 1997, pp. 281-284
BIAS, FREQUENCY, AND AREA DEPENDENCIES OF HIGH-FREQUENCY NOISE IN ALGAAS GAAS HBTS/
Authors: LIOU JJ JENKINS TJ LIOU LL NEIDHARD R BARLAGE DW FITCH R BARRETTE JP MACK M BOZADA CA LEE RHY DETTMER RW SEWELL JS
Citation: Jj. Liou et al., BIAS, FREQUENCY, AND AREA DEPENDENCIES OF HIGH-FREQUENCY NOISE IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 116-122
WET CHEMICAL DIGITAL ETCHING OF GAAS AT ROOM-TEMPERATURE
Authors: DESALVO GC BOZADA CA EBEL JL LOOK DC BARRETTE JP CERNY CLA DETTMER RW GILLESPIE JK HAVASY CK JENKINS TJ NAKANO K PETTIFORD CI QUACH TK SEWELL JS VIA GD
Citation: Gc. Desalvo et al., WET CHEMICAL DIGITAL ETCHING OF GAAS AT ROOM-TEMPERATURE, Journal of the Electrochemical Society, 143(11), 1996, pp. 3652-3656
SIMPLIFIED OHMIC AND SCHOTTKY CONTACT FORMATION FOR FIELD-EFFECT TRANSISTORS USING THE SINGLE-LAYER INTEGRATED METAL FIELD-EFFECT TRANSISTOR (SLIMFET) PROCESS
Authors: DESALVO GC QUACH TK BOZADA CA DETTMER RW NAKANO K GILLESPIE JK VIA GD EBEL JL HAVASY CK
Citation: Gc. Desalvo et al., SIMPLIFIED OHMIC AND SCHOTTKY CONTACT FORMATION FOR FIELD-EFFECT TRANSISTORS USING THE SINGLE-LAYER INTEGRATED METAL FIELD-EFFECT TRANSISTOR (SLIMFET) PROCESS, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 314-318
CITRIC-ACID ETCHING OF GAAS1-XSBX, AL0.5GA0.5SB, AND INAS FOR HETEROSTRUCTURE DEVICE FABRICATION
Authors: DESALVO GC KASPI R BOZADA CA
Citation: Gc. Desalvo et al., CITRIC-ACID ETCHING OF GAAS1-XSBX, AL0.5GA0.5SB, AND INAS FOR HETEROSTRUCTURE DEVICE FABRICATION, Journal of the Electrochemical Society, 141(12), 1994, pp. 3526-3531
ANALYTICAL 2-LAYER HALL ANALYSIS - APPLICATION TO MODULATION-DOPED FIELD-EFFECT TRANSISTORS
Authors: LOOK DC STUTZ CE BOZADA CA
Citation: Dc. Look et al., ANALYTICAL 2-LAYER HALL ANALYSIS - APPLICATION TO MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of applied physics, 74(1), 1993, pp. 311-314
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