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Results: 1-8 |
Results: 8
KINETICS OF SI1-XGEX(001) GROWTH ON SI(001)2X1 BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND GE2H6
Authors: KIM H TAYLOR N BRAMBLETT TR GREENE JE
Citation: H. Kim et al., KINETICS OF SI1-XGEX(001) GROWTH ON SI(001)2X1 BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND GE2H6, Journal of applied physics, 84(11), 1998, pp. 6372-6381
B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6
Authors: LU Q SARDELA MR TAYLOR N GLASS G BRAMBLETT TR SPILA T ABELSON JR GREENE JR
Citation: Q. Lu et al., B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6, Journal of crystal growth, 179(1-2), 1997, pp. 97-107
B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES
Authors: LU Q SARDELA MR BRAMBLETT TR GREENE JE
Citation: Q. Lu et al., B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES, Journal of applied physics, 80(8), 1996, pp. 4458-4466
B-DOPED SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6
Authors: BRAMBLETT TR LU Q KARASAWA T HASAN MA JO SK GREENE JE
Citation: Tr. Bramblett et al., B-DOPED SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6, Vacuum, 46(8-10), 1995, pp. 913-916
B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6
Authors: LU Q BRAMBLETT TR HASAN MA LEE NE GREENE JE
Citation: Q. Lu et al., B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6, Journal of applied physics, 78(10), 1995, pp. 6027-6032
B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES
Authors: LU Q BRAMBLETT TR LEE NE HASAN MA KARASAWA T GREENE JE
Citation: Q. Lu et al., B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES, Journal of applied physics, 77(7), 1995, pp. 3067-3076
GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING
Authors: BRAMBLETT TR LU Q LEE NE TAYLOR N HASAN MA GREENE JE
Citation: Tr. Bramblett et al., GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING, Journal of applied physics, 77(4), 1995, pp. 1504-1513
SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
Authors: BRAMBLETT TR LU Q HASAN MA JO SK GREENE JE
Citation: Tr. Bramblett et al., SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING, Journal of applied physics, 76(3), 1994, pp. 1884-1888
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