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Results: 1-9 |
Results: 9
ELECTROMIGRATION RESISTANCE OF COPPER INTERCONNECTS
Authors: SAVE D BRAUD F TORRES J BINDER F MULLER C WEIDNER JO HASSE W
Citation: D. Save et al., ELECTROMIGRATION RESISTANCE OF COPPER INTERCONNECTS, Microelectronic engineering, 33(1-4), 1997, pp. 75-84
COPPER CONTAMINATION EFFECTS IN 0.5 MU-M BICMOS TECHNOLOGY
Authors: GRAVIER T BRAUD F TORRES J PALLEAU J CHANTRE A KIRTSCH J
Citation: T. Gravier et al., COPPER CONTAMINATION EFFECTS IN 0.5 MU-M BICMOS TECHNOLOGY, Microelectronic engineering, 33(1-4), 1997, pp. 211-216
ULTRA-THIN DIFFUSION-BARRIERS FOR CU INTERCONNECTIONS AT THE GIGABIT GENERATION AND BEYOND
Authors: BRAUD F TORRES J PALLEAU J MERMET JL MARCADAL C RICHARD E
Citation: F. Braud et al., ULTRA-THIN DIFFUSION-BARRIERS FOR CU INTERCONNECTIONS AT THE GIGABIT GENERATION AND BEYOND, Microelectronic engineering, 33(1-4), 1997, pp. 293-300
STUDY OF THE THERMAL-STABILITY AT THE CU SIOF INTERFACE/
Authors: LABIADH A BRAUD F TORRES J PALLEAU J PASSEMARD G PIRES F DUPUY JC DUBOIS C GAUTIER B
Citation: A. Labiadh et al., STUDY OF THE THERMAL-STABILITY AT THE CU SIOF INTERFACE/, Microelectronic engineering, 33(1-4), 1997, pp. 369-375
ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/
Authors: BRAUD F TARTAVEL G PALLEAU J TORRES J PERSICO A REIMBOLD G
Citation: F. Braud et al., ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/, Quality and reliability engineering international, 12(4), 1996, pp. 305-308
CVD COPPER DEPOSITION FROM CU-I(HFAC)TMVS STUDIED THROUGH A MODELING EXPERIMENTAL-DESIGN
Authors: MERMET JL MOUCHE MJ PIRES F RICHARD E TORRES J PALLEAU J BRAUD F
Citation: Jl. Mermet et al., CVD COPPER DEPOSITION FROM CU-I(HFAC)TMVS STUDIED THROUGH A MODELING EXPERIMENTAL-DESIGN, Journal de physique. IV, 5(C5), 1995, pp. 517-523
CVD COPPER DEPOSITION FROM CU-I(HFAC)TMVS STUDIED THROUGH A MODELING EXPERIMENTAL-DESIGN
Authors: MERMET JL MOUCHE MJ PIRES F RICHARD E TORRES J PALLEAU J BRAUD F
Citation: Jl. Mermet et al., CVD COPPER DEPOSITION FROM CU-I(HFAC)TMVS STUDIED THROUGH A MODELING EXPERIMENTAL-DESIGN, Journal de physique. IV, 5(C5), 1995, pp. 517-523
PROCESS OPTIMIZATION OF COPPER MOCVD USING MODELING EXPERIMENTAL-DESIGN
Authors: MOUCHE MJ MERMET JL PIRES F RICHARD E TORRES J PALLEAU J BRAUD F
Citation: Mj. Mouche et al., PROCESS OPTIMIZATION OF COPPER MOCVD USING MODELING EXPERIMENTAL-DESIGN, Applied surface science, 91(1-4), 1995, pp. 129-133
TI-DIFFUSION BARRIER IN CU-BASED METALLIZATION
Authors: BRAUD F TORRES J PALLEAU J MERMET JL MOUCHE MJ
Citation: F. Braud et al., TI-DIFFUSION BARRIER IN CU-BASED METALLIZATION, Applied surface science, 91(1-4), 1995, pp. 251-256
Risultati: 1-9 |