ELECTROMIGRATION OF INTERCONNECTS OF A TIN CU/TIN/TI STRUCTURE/

Electromigration (EM) tests have been performed to assess the intercon nect reliability of a TiN/Cu/TiN/Ti structure. In this paper we demons trate the feasibility of Cu interconnects and we present the first ele ctrical results. An energy activation close to 1.2 eV as found for the grain boundary diffusion. We explain the variation in the Black param eters with the different conditions applied for the reliability tests. Particular attention is paid to the dependence of the activation ener gy on current densities and width.