Authors: SIMLINGER T BRECH H GRAVE T SELBERHERR S

Citation: T. Simlinger et al., SIMULATION OF SUBMICRON DOUBLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY TRANSISTORS WITH MINIMOS-NT, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 700-707

Authors: BRECH H GRAVE T SIMLINGER T SELBERHERR S

Citation: H. Brech et al., OPTIMIZATION OF PSEUDOMORPHIC HEMTS SUPPORTED BY NUMERICAL SIMULATIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1822-1828