SIMULATION OF SUBMICRON DOUBLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY TRANSISTORS WITH MINIMOS-NT

Simulations and measurements of submicron pseudomorphic high electron mobility transistors (HEMT's) are presented. For the simulations the g eneric device simulator MINIMOS-NT is used which is capable of dealing with complex device geometries as well as with several physical model s represented by certain sets of partial differential equations. A des cription of the structure of the simulator is given, which shows the b asic idea of splitting the device geometry into distinct regions, With in these ''segments,'' arbitrary material properties and physical mode ls, i.e., partial differential equations, can be defined independently , The segments are linked together by interface models which account f or the interface conditions, The simulated characteristics of a HEMT w ith a gate length of 240 nm are compared with the measured data. Essen tial physical effects which determine the behavior of the device can b e identified in the output and transfer characteristics.