Authors:
MI J
LETOURNEAU P
GANIERE JD
GAILHANOU M
DUTOIT M
DUBOIS C
DUPUY JC
BREMOND G
Citation: J. Mi et al., IMPROVEMENT OF CRYSTAL QUALITY OF EPITAXIAL SILICON-GERMANIUM ALLOY LAYERS BY CARBON ADDITIONS, Helvetica Physica Acta, 67(2), 1994, pp. 219-220
Authors:
SOUIFI A
BREMOND G
BENYATTOU T
GUILLOT G
DUTARTRE D
WARREN P
Citation: A. Souifi et al., BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI, Applied physics letters, 62(23), 1993, pp. 2986-2988