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Results: 1-9 |
Results: 9
BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/
Authors: CAFFIN D BESOMBES C BRESSE JF LEGAY P LEROUX G PATRIARCHE G LAUNAY P
Citation: D. Caffin et al., BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 854-861
ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4
Authors: ETRILLARD J OSSART P PATRIARCHE G JUHEL M BRESSE JF DAGUET C
Citation: J. Etrillard et al., ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 626-632
A NEW ANALYTICAL MODEL FOR CATHODOLUMINESCENCE EMISSION AS A FUNCTIONOF THE BEAM ENERGY IN GAAS AND INP MATERIALS
Authors: BRESSE JF
Citation: Jf. Bresse, A NEW ANALYTICAL MODEL FOR CATHODOLUMINESCENCE EMISSION AS A FUNCTIONOF THE BEAM ENERGY IN GAAS AND INP MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 199-203
MICROBEAM AND NANOBEAM ANALYSIS - PREFACE
Authors: BENOIT D BRESSE JF VANTDACK L WERNER H WERNISCH J
Citation: D. Benoit et al., MICROBEAM AND NANOBEAM ANALYSIS - PREFACE, Mikrochimica acta, 1996, pp. 5-5
CATHODOLUMINESCENCE MICROSCOPY AND SPECTROSCOPY OF SEMICONDUCTORS ANDWIDE BANDGAP INSULATING MATERIALS
Authors: BRESSE JF REMOND G AKAMATSU B
Citation: Jf. Bresse et al., CATHODOLUMINESCENCE MICROSCOPY AND SPECTROSCOPY OF SEMICONDUCTORS ANDWIDE BANDGAP INSULATING MATERIALS, Mikrochimica acta, 1996, pp. 135-166
FABRICATION OF ALL-OPTICAL QUANTUM-WELL BISTABLE MICRORESONATORS BY REACTIVE ION ETCHING
Authors: RIVERA T IZRAEL A AZOULAY R KUSZELEWICZ R BRESSE JF OUDAR JL LADAN FR
Citation: T. Rivera et al., FABRICATION OF ALL-OPTICAL QUANTUM-WELL BISTABLE MICRORESONATORS BY REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 268-272
APPLICATION ASPECTS OF BEAM INJECTION METHODS
Authors: BRESSE JF
Citation: Jf. Bresse, APPLICATION ASPECTS OF BEAM INJECTION METHODS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 229-232
CHEMICAL-COMPOSITION OF GAAS OXIDE LAYERS BY AUGER IN-DEPTH PROFILES AND X-RAY PHOTOELECTRON-SPECTROSCOPY EXPERIMENTS
Authors: BRESSE JF CARDINAUD C
Citation: Jf. Bresse et C. Cardinaud, CHEMICAL-COMPOSITION OF GAAS OXIDE LAYERS BY AUGER IN-DEPTH PROFILES AND X-RAY PHOTOELECTRON-SPECTROSCOPY EXPERIMENTS, Scanning microscopy, 8(4), 1994, pp. 979-986
ELECTRON-ACOUSTIC SIGNAL OF METALLIC LAYERS OVER A SEMICONDUCTOR SUBSTRATE
Authors: BRESSE JF
Citation: Jf. Bresse, ELECTRON-ACOUSTIC SIGNAL OF METALLIC LAYERS OVER A SEMICONDUCTOR SUBSTRATE, Scanning microscopy, 7(2), 1993, pp. 523-531
Risultati: 1-9 |