Authors: TITUS JL WHEATLEY CF BURTON DI MOURET I ALLENSPACH M BREWS J SCHRIMPF R GALLOWAY K PEASE RL

Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934