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Results:
1-7
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Results: 7
Authors:
BRIERE O
BARLA K
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997), Solid-state electronics, 42(5), 1998, pp. 881-881
Authors:
HALIMAOUI A
BRIERE O
GHIBAUDO G
Citation: A. Halimaoui et al., QUASI-BREAKDOWN IN ULTRATHIN GATE DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 157-160
Authors:
LEROUX C
BLACHIER D
BRIERE O
REIMBOLD G
Citation: C. Leroux et al., LIGHT-EMISSION MICROSCOPY FOR THIN OXIDE RELIABILITY-ANALYSIS, Microelectronic engineering, 36(1-4), 1997, pp. 297-300
Authors:
BRIERE O
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., BREAKDOWN CHARACTERISTICS OF ULTRA-THIN GATE OXIDES FOLLOWING FIELD AND TEMPERATURE STRESSES, Solid-state electronics, 41(7), 1997, pp. 981-985
Authors:
BRIERE O
BARLA K
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS, Solid-state electronics, 41(7), 1997, pp. 987-990
Authors:
STRABONI A
BRIERE O
THIRION V
BARLA K
Citation: A. Straboni et al., RELIABILITY AND CHARACTERIZATION OF ULTRA-THIN DIELECTRIC FILMS USINGFOWLER-NORDHEIM INJECTION EXPERIMENT, Microelectronic engineering, 28(1-4), 1995, pp. 301-308
Authors:
BRIERE O
COTTIN P
STRABONI A
Citation: O. Briere et al., COMPARISON OF RAPID RAMP VOLTAGE AND TUNNELING INJECTION STRESS EXPERIMENTS FOR THE CHARACTERIZATION OF THIN MOS GATE OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 190-194
Risultati:
1-7
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