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Results: 3
CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/, Journal of applied physics, 76(7), 1994, pp. 4237-4243
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/, Semiconductor science and technology, 8(7), 1993, pp. 1487-1489
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/, Journal of applied physics, 74(3), 1993, pp. 1894-1899
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